Cosmic ray ruggedness of IGBTs for hybrid vehicles

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 129-132

  Nishida, Shuichi ^a   Shoji, Tomoyuki ^b   Ohnishi, Toyokazu ^a   Fujikawa, Touma ^a   Nose, Noboru ^a   Ishiko, Masayasu ^b   Hamada, Kimimori ^a  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE MECHANISM; HIGH VOLTAGE; HYBRID VEHICLES; OPTIMIZED DEVICES; POWER SEMICONDUCTORS; QUALITY STANDARD; SINGLE-EVENT BURNOUTS;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; COSMOLOGY; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); LAND VEHICLE PROPULSION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

COSMIC RAYS;

EID: 77956592603     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. D.L.Oberg, J.L.Wert, E.Normand, P.R.Majewski and S.A.Wender: "First Observation of Power MOSFET Burnout with High Energy Neutrons", IEEE Transaction on Nuclear Science, Vol.43, No.6, p.2913,1996.
2. E.Normand, J.L.Wert, D.L.Oberg, P.R.Majewski, P.Voss and S.A.Wender: "Neutron-Induced Single Event Burnout in High Voltage Electronics", IEEE Transaction on Nuclear Science, Vol.44, No.6, p2358, 1997.
3. H.Zeller: "Cosmic Ray Induced Failures in High Power Semiconductor Devices", Microelectronics Reliability, Vol.37, No.10-11, p.1711, 1997.
4. J.F.Ziegler and W.L.Lanford: "The effect of sea level cosmic ray on electric devices", J.Appl.Phys.52, p.4305, 1981.
5. G.Soelkner, W.Kaindl, H.-J.Schulze, G.Wachutka: "Reliability of power electronic devices against cosmic radiation-induced failure", Microelectronics Reliability, Vol44, p.1399, 2004.