Influence of indium cluster on the high and constant background electron density in ternary In xGa 1-xN alloys

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Li, Chong ^a   Wu, Fengmin ^b   Li, Shu Shen ^a   Xia, Jian Bai ^a   Li, Jingbo ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b ZHEJIANG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; INTERSTITIAL HYDROGEN; NITROGEN VACANCIES; SPECIAL QUASIRANDOM STRUCTURES; STRONG CONTRAST; UNDERLYING MECHANISM;

CARRIER CONCENTRATION; CERIUM ALLOYS; ELECTRON DENSITY MEASUREMENT; ELECTRONS;

GALLIUM ALLOYS;

EID: 84865111428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745008     Document Type: Article

References (41)

1. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994). 10.1063/1.358463
2. J. W. Orton and C. T. Foxon, Rep. Prog. Phys. 61, 1 (1998). 10.1088/0034-4885/61/1/001
3. J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 93, 162107 (2008). 10.1063/1.3006332
4. O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, Appl. Phys. Lett. 91, 132117 (2007). 10.1063/1.2793180
5. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 93, 182107 (2008). 10.1063/1.3006432
6. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 95, 261904 (2009). 10.1063/1.3279149
7. W. J. Moore, J. A. Freitas, Jr., G. C. B. Braga, R. J. Molnar, S. K. Lee, K. Y. Lee, and I. J. Song, Appl. Phys. Lett. 79, 2570 (2001). 10.1063/1.1411985
8. D. C. Look, H. Lu, W. Schaff, J. Jasinski, and Z. Liliental-Weber, Appl. Phys. Lett. 80, 258 (2002). 10.1063/1.1432742
9. V. Cimalla, V. Lebedev, F. M. Morales, R. Goldhahn, and O. Ambacher, Appl. Phys. Lett. 89, 172109 (2006). 10.1063/1.2364666
10. A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008). 10.1063/1.2832369
11. B. N. Pantha, H. Wang, N. Khan, J. Y. Lin, and H. X. Jiang, Phys. Rev. B 84, 075327 (2011). 10.1103/PhysRevB.84.075327
12. S.-H. Wei and S. B. Zhang, Phys. Rev. B 66, 155211 (2002). 10.1103/PhysRevB.66.155211
13. P. Boguslawski, E. Briggs, and J. Bernholc, Phys. Rev. B 51, 17255 (1995). 10.1103/PhysRevB.51.17255
14. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 50, R8067 (1994); 10.1103/PhysRevB.50.8067
15. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995). 10.1103/PhysRevLett.75.4452
16. T. Mattila, A. P. Seitsonen, and R. M. Nieminen, Phys. Rev. B 54, 1474 (1996). 10.1103/PhysRevB.54.1474
17. A. Zunger, S.-H. Wei, L. G. Ferreira, and J. E. Bernard, Phys. Rev. Lett. 65, 353 (1990). 10.1103/PhysRevLett.65.353
18. S.-H. Wei, L. G. Ferreira, J. E. Bernard, and A. Zunger, Phys. Rev. B 42, 9622 (1990). 10.1103/PhysRevB.42.9622
19. J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 124, 219906 (2006). 10.1063/1.2204597
20. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
21. P. E. Blochl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50.17953
22. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
23. S.-H. Wei, Comput. Mater. Sci. 30, 337 (2004). 10.1016/j.commatsci.2004. 02.024
24. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003). 10.1063/1.1600519
25. Semiconductors: Data Handbook, 3rd ed., edited by, O. Madelung, (Springer, Berlin, 2004).
26. L. Vegard, Z. Phys. 5, 17 (1921). 10.1007/BF01349680
27. X. Q. Shen, T. Ide, M. Shimizu, and H. Okumura, J. Cryst. Growth 237, 1148 (2002). 10.1016/S0022-0248(01)02073-5
28. I. Gorczyca, S. P. epkowski, T. Suski, N. E. Christensen, and A. Svane, Phys. Rev. B 80, 075202 (2009). 10.1103/PhysRevB.80.075202
29. P. G. Moses and C. G. Van de Walle, Appl. Phys. Lett. 96, 021908 (2010). 10.1063/1.3291055
30. H. J. Xiang, S.-H. Wei, J. L. F. Da Silva, and J. B. Li, Phys. Rev. B 78, 193301 (2008). 10.1103/PhysRevB.78.193301
31. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 80, 4741 (2002). 10.1063/1.1489481
32. M. Marques, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, J. Furthmüller, and F. Bechstedt, Appl. Phys. Lett. 83, 890 (2003). 10.1063/1.1597986
33. R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller, and L. K. Teles, Appl. Phys. Lett. 98, 151907 (2011). 10.1063/1.3576570
34. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 69, 2719 (1996). 10.1063/1.117689
35. P. D. C. King, T. D. Veal, C. E. Kendrick, L. R. Bailey, S. M. Durbin, and C. F. McConville, Phys. Rev. B 78, 033308 (2008). 10.1103/PhysRevB.78.033308
36. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996). 10.1063/1.116177
37. K. Beshah, D. Zamir, P. Becla, P. A. Wolff, and R. G. Griffin, Phys. Rev. B 36, 6420 (1987). 10.1103/PhysRevB.36.6420
38. A. Janotti, S. B. Zhang, S.-H. Wei, and C. G. Van deWalle, Phys. Rev. Lett. 89, 086403 (2002). 10.1103/PhysRevLett.89.086403
39. S. Ruffenach, M. Moret, O. Briot, and B. Gil, Appl. Phys. Lett. 95, 042102 (2009). 10.1063/1.3189212
40. V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, B. Monemar, M. Schubert, N. Franco, C. L. Hsiao, L. C. Chen, W. J. Schaff, L. W. Tu, T. Yamaguchi, and Y. Nanishi, Appl. Phys. Lett. 96, 081907 (2010). 10.1063/1.3327333
41. G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T. H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, and O. Ambacher, Phys. Rev. B 77, 125207 (2008). 10.1103/PhysRevB.77.125207