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Physical Review Letters

Volumn 89, Issue 8, 2002, Pages 086403/1-086403/4

Effects of hydrogen on the electronic properties of dilute GaAsN alloys

(4) Janotti, A a Zhang, S B a Wei, Su Huai a Van de Walle, C G b

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; CARRIER MOBILITY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; HYDROGEN; HYDROGEN BONDS; NUMERICAL METHODS;

ATOMIC STRUCTURE; BAND GAP; CONDUCTION BAND; COULOMB BINDING ENERGY; FIRST-PRINCIPLES CALCULATIONS; VALENCE BAND;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043156476 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.89.086403 Document Type: Article

Times cited : (101)

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