High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5783-5787

  Yang, Po Yu ^a   Wang, Jyh Liang ^b   Tsai, Wei Chih ^c   Chang, Yu Cheng ^d   Wang, Shui Jinn ^e   Lee, I Che ^a   Wang, Chao Lung ^a   Chien, Yun Shan ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^e NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrothermal Method; Thin Film Transistor (TFT); Zinc Oxide (ZnO)

Indexed keywords

CHANNEL REGION; CRYSTAL GRAINS; CURRENT DRIVABILITY; GRAIN BOUNDARY EFFECTS; HIGH QUALITY; HYDROTHERMAL METHODS; LATERAL GRAIN GROWTH; LOW TEMPERATURES; ON/OFF CURRENT RATIO; PROPER DESIGN; SOURCE/DRAIN STRUCTURES; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE (ZNO); ZNO;

GRAIN BOUNDARIES; GRAIN GROWTH; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE; THIN FILM TRANSISTORS;

ZINC OXIDE;

EID: 84865108351     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6309     Document Type: Article

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