Ultraviolet detecting properties of ZnO-based thin film transistors

Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 75-79

  Bae, H S ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

Photo response; Photoconductivity; Thin film transistor; Zinc oxide

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; EVAPORATION; LIGHTING; MAGNETRON SPUTTERING; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTODETECTORS; PHOTONS; POLYCRYSTALS; RAPID THERMAL ANNEALING; THICKNESS MEASUREMENT; ZINC OXIDE;

BANDGAP; OPTICAL POWER DENSITY; PHOTO-RESPONSE; UV ILLUMINATION;

THIN FILM TRANSISTORS;

EID: 10044220777     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.196     Document Type: Article

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