Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines

Journal of the American Chemical Society

Volumn 128, Issue 15, 2006, Pages 4928-4929

  Facchetti, Antonio ^a   Yoon, Myung Han ^a   Marks, Tobin J ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOL; ALUMINUM; GOLD; POLY(METHYL METHACRYLATE); POLYMER; POVIDONE; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; DEVICE; ELECTRIC POTENTIAL; ELECTRODE; EMBEDDING; FILM; GLASS TRANSITION TEMPERATURE; SEMICONDUCTOR;

EID: 33646161966     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja058266z     Document Type: Article

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35. 6 thickness and k. This is probably the result of thermoplastic resins used in the Ag ink composition which increase the effective thickness between the Au top electrodes and Ag bottom particles.
36. This approach has also been successful for hot-pressing/embedding using poly(vinylpyrrolidone) and polystyrene as well as embedding using various poly(dimethylsiloxane) polymers (Figure S6).