Investigation on bias stress effects in n-type PDI8-CN2 thin-film transistors

Organic Electronics

Volumn 13, Issue 11, 2012, Pages 2281-2289

  Di Girolamo, F V ^a   Ciccullo, F ^a   Barra, M ^a   Carella, A ^b   Cassinese, A ^a  

^a CNR SPIN   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Bias stress instability in organic field effect devices; n Type organic semiconducors; Proton diffusion

Indexed keywords

BIAS VOLTAGE; DIELECTRIC MATERIALS; GATE DIELECTRICS; INTERFACES (MATERIALS); LOW-K DIELECTRIC; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILM TRANSISTORS; THIN FILMS;

BIAS STRESS EFFECTS; BIAS STRESS INSTABILITY IN ORGANIC FIELD EFFECT DEVICES; DIELECTRIC-SEMICONDUCTOR INTERFACES; ELECTROCHEMICAL REACTIONS; INTERFACE CHEMISTRY; MORPHOLOGICAL PROPERTIES; N-TYPE ORGANIC SEMICONDUCORS; PROTON DIFFUSION;

THIN FILM CIRCUITS;

EID: 84864825033     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.06.044     Document Type: Article

References (24)

1. H. Sirringhaus Reliability of organic field-effect transistors Adv. Mater. 21 2009 3859
2. S.G.J. Mathijssen, M. Colle, H. Gomes, E.C.P. Smits, B. de Boer I, P.A. McCulloch, D. Bobbert, and de Leeuw Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors Adv. Mater. 19 2007 2785
3. T. Miyadera, S.D. Wang, T. Minari, K. Tsukagoshi, and Y. Aoyagi Charge trapping induced current instability in pentacene thin film transistors: trapping barrier and effect of surface treatment Appl. Phys. Lett. 93 2008 033304
4. B. Lee, A. Wan, D. Mastrogiovanni, J.E. Anthony, E. Garfunkel, and V. Podzorov Origin of the bias-stress instability in single-crystal organic field-effect transistors Phys. Rev. B 82 2010 085302
5. A. Sharma, S.G.J. Mathijssen, M. Kemerink, D.M. de Leeuw, and P. Bobbert Proton migration mechanism for the instability of organic field-effect transistors Appl. Phys. Lett. 95 2009 253305
6. A. Sharma, S.G.J. Mathijssen, E.C.P. Smits, M. Kemerink, D.M. de Leeuw, and P. Bobbert Proton migration mechanism for operation instabilities in organic field-effect transistors Phys. Rev. B 82 2010 075322
7. M. Barra, F.V. Di Girolamo, F. Chiarella, M. Salluzzo, Z. Chen, A. Facchetti, L. Anderson, and A. Cassinese Transport property and charge trap comparison for N-channel perylene diimide transistors with different air-stability J. Phys. Chem. C 114 2010 20387
8. F. Colleaux, J.M. Ball, P.H. Wobkenberg, P.J. Hotchkiss, S.R. Marder, and T.D. Anthopuolos Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics Phys. Chem. Chem. Phys. 13 2011 14387
9. X. Cheng, M. Caironi, Y.Y. Noh, C. Newman, J. Wang, M.J. Lee, K. Banger, R. Di Pietro, A. Facchetti, and H. Sirringhaus Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes Org. Electron. 13 2012 320
10. H. Yan, Z. Chen, Y. Zheng, C. Newman, J.R. Quinn, F. Dotz, M. Kastler, and A. Facchetti A high-mobility electron-transporting polymer for printed transistors Nature 457 2009 680
11. B.A. Jones, A. Facchetti, M.R. Wasielewski, and T.J. Marks Tuning orbital energetics in arylene diimide semiconductors:materials design for ambient stability of n-type charge transport J. Am. Chem. Soc. 129 2007 15259
12. B.A. Jones, A. Facchetti, M.R. Wasielewski, and T.J. Marks Effects of arylene diimide thin film growth conditions on n-channel OFET performance Adv. Funct. Mater. 18 2008 1329
13. N.A. Minder, S. Ono, Z. Chen, A. Facchetti, and A.F. Morpurgo Band-like electron transport in organic transistors and implication of the molecular strcture for perfromance optimization Adv. Mater. 24 2012 503
14. F.V. Di Girolamo, C. Aruta, M. Barra, P. D'Angelo, and A. Cassinese Organic film thickness influence on the bias stress instability in sexithiophene field effect transistors Appl. Phys. A 96 2009 481
15. F. Liscio, S. Milita, C. Albonetti, P. D'Angelo, A. Guagliardi, N. Masciocchi, R.G. Della Valle, E. Venuti, A. Brillante, and F. Biscarini Structure and morphology of PDI8-CN2 for n-type thin-film transistors Adv. Funct. Mater. 22 2012 943
16. Z. Bao, and J. Locklin Organic Field-Effect Transistors 2007 Taylor & Francis Boca Raton, USA
17. M. Barra, F.V. Di Girolamo, N.A. Minder, I. Gutierrez Letama, Z. Chen, A. Facchetti, A.F. Morpurgo, and A. Cassinese Very low bias stress in n-type organic single crystal transistors Appl. Phys. Lett. 100 2012 133301
18. K.K. Ryu, I. Nausieda, D.D. He, A.I. Akinwande, V. Bulovic, and C.G. Sodini Bias-stress effect in pentacene organic thin-film transistors IEEE Trans. Electron. Dev. 57 2010 1003
19. A. Sharma, S.G.J. Mathijssen, P. Bobbert, and D.M. de Leeuw Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors Appl. Phys. Lett. 99 2011 103302
20. A. Sharma, S.G.J. Mathijssen, T. Cramer, M. Kemerink, D.M. de Leeuw, and P.A. Bobbert Anomalous current transients in organic field-effect transistors Appl. Phys. Lett. 96 2010 103306
21. P.A. Bobbert, A. Sharma, S.G.J. Mathijssen, M. Kemerink, and D.M. De Leeuw Operational stability of organic field-effect transistors Adv. Mater. 24 2012 1146
22. C.M. Aguirre, P.L. Levesque, M. Paillet, F. Lapointe, B.C. St-Antoine, P. Desjardins, and R. Martel The role of the oxygen/water redox couple in suppressing electron conduction in field-effect transistors Adv. Mater. 21 2009 3087
23. D.M. de Leeuw, M.M.J. Simenon, A.R. Brown, and R.E.F. Einerhand Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices Synth. Metals 87 1997 53
24. D.L. Angst, and G.W. Simmons MANCA TITOLO Langmuir 7 1991 2236 2242