Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

Organic Electronics

Volumn 13, Issue 2, 2012, Pages 320-328

  Cheng, Xiaoyang ^a   Caironi, Mario ^a,b   Noh, Yong Young ^a,c   Newman, Christopher ^d   Wang, Jianpu ^a   Lee, Mi Jung ^a   Banger, Kal ^a   Di Pietro, Riccardo ^a   Facchetti, Antonio ^d   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^c Hanbat National University   (South Korea)

^d POLYERA CORPORATION   (United States)

Author keywords

Bias stress stability; Contact resistance; Inkjet printing; Organic field effect transistor

Indexed keywords

CONTACT RESISTANCE; ELECTRODES; GATE DIELECTRICS; INK JET PRINTING; SILVER NANOPARTICLES; TRANSISTORS;

BIAS STRESS STABILITIES; CRYSTALLINE DOMAINS; CURRENT SATURATION; HIGH ELECTRON MOBILITY; LONG CHANNEL TRANSISTORS; PRINTED ELECTRODES; SPIN-COATED THIN FILMS; SUBMICROMETERS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84255163225     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.12.001     Document Type: Article

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