SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 99, Issue 10, 2011, Pages

Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors

(4) Sharma, A a Mathijssen, S G J a,b Bobbert, P A a De Leeuw, D M b

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; EXPONENTIAL DEPENDENCE; GATE BIAS; GATE BIAS VOLTAGE; OPERATIONAL STABILITY; OXIDATION POTENTIALS; THERMO DYNAMIC ANALYSIS; TIME DEPENDENCE;

BIAS VOLTAGE; RELAXATION PROCESSES; THERMOANALYSIS; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80052813886 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3634066 Document Type: Article

Times cited : (12)

References (16)

1
- 27144540626
- 10.1002/adma.v17:20
- H. Sirringhaus, Adv. Mater. 17, 2411 (2005). 10.1002/adma.v17:20
- (2005) Adv. Mater. , vol.17 , pp. 2411
- Sirringhaus, H.¹

2
- 33746629488
- A bright future for organic field-effect transistors
- DOI 10.1038/nmat1699, PII NMAT1699
- M. Muccini, Nature 5, 605 (2006). 10.1038/nmat1699 (Pubitemid 44157676)
- (2006) Nature Materials , vol.5 , Issue.8 , pp. 605-613
- Muccini, M.¹

3
- 33644525617
- 10.1063/1.2178213
- L. Zhou, A. Wanga, S. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 88, 083502 (2006). 10.1063/1.2178213
- (2006) Appl. Phys. Lett. , vol.88 , pp. 083502
- Zhou, L.¹ Wanga, A.² Wu, S.³ Sun, J.⁴ Park, S.⁵ Jackson, T.N.⁶

4
- 0000922596
- 10.1103/PhysRevB.43.4057
- R. S. Crandall, Phys. Rev. B 43, 4057 (1991). 10.1103/PhysRevB.43.4057
- (1991) Phys. Rev. B , vol.43 , pp. 4057
- Crandall, R.S.¹

5
- 2442630235
- 10.1063/1.1713035
- H. L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, and D. de Leeuw, Appl. Phys. Lett. 84, 3184 (2004). 10.1063/1.1713035
- (2004) Appl. Phys. Lett. , vol.84 , pp. 3184
- Gomes, H.L.¹ Stallinga, P.² Dinelli, F.³ Murgia, M.⁴ Biscarini, F.⁵ De Leeuw, D.⁶

6
- 35349027319
- 10.1002/adma.v19:19
- S. G. J. Mathijssen, M. Clle, H. Gomes, E. C. P. Smits, B. de Boer, I. McCulloch, P. A. Bobbert, and D. M. de Leeuw, Adv. Mater. 19, 2785 (2007). 10.1002/adma.v19:19
- (2007) Adv. Mater. , vol.19 , pp. 2785
- Mathijssen, S.G.J.¹ Clle, M.² Gomes, H.³ Smits, E.C.P.⁴ De Boer, B.⁵ McCulloch, I.⁶ Bobbert, P.A.⁷ De Leeuw, D.M.⁸

7
- 40049090802
- Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors
- DOI 10.1103/PhysRevLett.100.056601
- N. I. Craciun, J. Wildeman, and P. W. M. Blom, Phys. Rev. Lett. 100, 056601 (2008). 10.1103/PhysRevLett.100.056601 (Pubitemid 351321515)
- (2008) Physical Review Letters , vol.100 , Issue.5 , pp. 056601
- Craciun, N.I.¹ Wildeman, J.² Blom, P.W.M.³

8
- 0033137903
- 10.1016/S0379-6779(98)01162-X
- M. Matters, D. M. de Leeuw, P. Herwig, and A. Brown, Synth. Met. 102, 998 (1999). 10.1016/S0379-6779(98)01162-X
- (1999) Synth. Met. , vol.102 , pp. 998
- Matters, M.¹ De Leeuw, D.M.² Herwig, P.³ Brown, A.⁴

9
- 19444377967
- 10.1103/PhysRevLett.93.076601
- D. Lang, X. Chi, T. Siegrist, A. Sergent, and A. Ramirez, Phys. Rev. Lett. 93, 076601 (2004). 10.1103/PhysRevLett.93.076601
- (2004) Phys. Rev. Lett. , vol.93 , pp. 076601
- Lang, D.¹ Chi, X.² Siegrist, T.³ Sergent, A.⁴ Ramirez, A.⁵

10
- 0141676353
- 10.1103/PhysRevB.68.085316
- R. A. Street, A. Salleo, and M. L. Chabinyc, Phys. Rev. B 68, 085316 (2003). 10.1103/PhysRevB.68.085316
- (2003) Phys. Rev. B , vol.68 , pp. 085316
- Street, R.A.¹ Salleo, A.² Chabinyc, M.L.³

11
- 73449109891
- 10.1063/1.3275807
- A. Sharma, S. G. J. Mathijssen, M. Kemerink, D. M. de Leeuw, and P. A. Bobbert, Appl. Phys. Lett. 95, 255305 (2009). 10.1063/1.3275807
- (2009) Appl. Phys. Lett. , vol.95 , pp. 255305
- Sharma, A.¹ Mathijssen, S.G.J.² Kemerink, M.³ De Leeuw, D.M.⁴ Bobbert, P.A.⁵

12
- 0031100005
- 10.1016/S0379-6779(97)80097-5
- D. M. de Leeuw, M. M. J. Simenon, A. R. Brown, and R. E. F. Einerhand, Synth. Met. 87, 53 (1997). 10.1016/S0379-6779(97)80097-5
- (1997) Synth. Met. , vol.87 , pp. 53
- De Leeuw, D.M.¹ Simenon, M.M.J.² Brown, A.R.³ Einerhand, R.E.F.⁴

13
- 77957557366
- 10.1103/PhysRevB.82.085302
- B. Lee, A. Wan, D. Mastrogiovanni, J. Anthony, E. Garfunkel, and V. Podzorov, Phys. Rev. B 82, 085302 (2010). 10.1103/PhysRevB.82.085302
- (2010) Phys. Rev. B , vol.82 , pp. 085302
- Lee, B.¹ Wan, A.² Mastrogiovanni, D.³ Anthony, J.⁴ Garfunkel, E.⁵ Podzorov, V.⁶

14
- 77957579926
- 10.1103/PhysRevB.82.075322
- A. Sharma, S. G. J. Mathijssen, E. C. P. Smits, M. Kemerink, D. M. de Leeuw, and P. A. Bobbert, Phys. Rev. B 82, 075322 (2010). 10.1103/PhysRevB.82. 075322
- (2010) Phys. Rev. B , vol.82 , pp. 075322
- Sharma, A.¹ Mathijssen, S.G.J.² Smits, E.C.P.³ Kemerink, M.⁴ De Leeuw, D.M.⁵ Bobbert, P.A.⁶

15
- 33750079023
- Proton diffusion mechanism in amorphous SiO2
- DOI 10.1103/PhysRevLett.97.155901
- J. Godet and A. Pasquarello, Phys. Rev. Lett. 97, 155901 (2006). 10.1103/PhysRevLett.97.155901 (Pubitemid 44574349)
- (2006) Physical Review Letters , vol.97 , Issue.15 , pp. 155901
- Godet, J.¹ Pasquarello, A.²

16
- 69249090080
- 10.1002/adma.200900550
- C. M. Aguirre, P. L. Levesque, M. P. F. Lapointe, B. C. St-Antoine, P. Desjardins, and R. Martel, Adv. Mater. 21, 3087 (2009). 10.1002/adma.200900550
- (2009) Adv. Mater. , vol.21 , pp. 3087
- Aguirre, C.M.¹ Levesque, P.L.² Lapointe, M.P.F.³ St-Antoine, B.C.⁴ Desjardins, P.⁵ Martel, R.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.