The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Applied Surface Science

Volumn 258, Issue 24, 2012, Pages 9891-9895

  Lin, Y C ^a   Hsu, C Y ^b   Hung, S K ^a   Chang, C H ^b   Wen, D C ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Buffer layer; Electrical resistivity; Magnetron sputtering; Post annealing; Ti doped ZnO; Transmittance

Indexed keywords

BUFFER LAYERS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ENERGY GAP; FILM PREPARATION; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HALL MOBILITY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OXIDE FILMS; SURFACE ROUGHNESS; THIN FILMS; TITANIUM OXIDES; ZINC OXIDE;

ANNEALING TEMPERATURES; OPTOELECTRONIC PROPERTIES; POST ANNEALING; PREFERENTIAL ORIENTATION; THERMAL-ANNEALING; THREE-DIMENSIONAL ISLANDS; TI-DOPED ZNO; TRANSMITTANCE;

ANNEALING;

EID: 84864702914     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.06.046     Document Type: Article

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