Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Applied Surface Science

Volumn 252, Issue 16, 2006, Pages 5687-5692

  Lv, Maoshui ^a   Xiu, Xianwu ^a   Pang, Zhiyong ^a   Dai, Ying ^a   Han, Shenghao ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Sputtering; Transparent conducting films; Zinc oxide; Zirconium

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETRON SPUTTERING; POLYCRYSTALS; THIN FILMS; TRANSPARENCY; ZIRCONIUM;

DEPOSITION PRESSURE; HALL MOBILITY; HEXAGONAL STRUCTURE; OPTICAL BAND GAP; TRANSMITTANCE; TRANSPARENT CONDUCTING; TRANSPARENT CONDUCTING FILMS;

ZINC OXIDE;

EID: 33744525183     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.042     Document Type: Article

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