Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO 2 insertion layer thickness

Journal of Crystal Growth

Volumn 356, Issue 1, 2012, Pages 65-69

  Okada, Atsushi ^a   Toko, Kaoru ^a   Hara, Kosuke O ^b   Usami, Noritaka ^b,c   Suemasu, Takashi ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Growth models; A3. Solid phase epitaxy; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

DIFFUSION RATE; FUSED SILICA SUBSTRATES; GROWTH MODELS; GROWTH MORPHOLOGY; HIGH GROWTH RATE; INSERTION LAYERS; LOW GROWTH RATE; POLY-SI THIN FILM; SI ATOMS; SOLID PHASE EPITAXY; THICK LAYERS; THIN LAYERS;

CRYSTAL ORIENTATION; SILICON;

ALUMINUM;

EID: 84864467606     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.015     Document Type: Article

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