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Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 8003-8006

Improvement in SiO2 film properties formed by sputtering method at 150°C

(4) Urabe, Yuji a Sameshima, Toshiyuki a Motai, Katsuyuki b Ichimura, Koji b

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

b DAI NIPPON PRINTING CO LTD (Japan)

Author keywords

High pressure H2O vapor; Hysteresis; MOS capacitor; Remote plasma

Indexed keywords

CAPACITANCE; CAPACITORS; HEAT TREATING FURNACES; HEAT TREATMENT; HYSTERESIS; OXYGEN; PLASMA APPLICATIONS; PLASMAS; SILICON COMPOUNDS; VAPORS;

CAPACITANCE RESPONSE; FILM PROPERTIES; HIGH DENSITIES; HIGH-PRESSURE H2O VAPOR; HYSTERESIS PHENOMENON; METAL-OXIDE- SEMICONDUCTORCAPACITORS; OXIDE-CHARGE DENSITIES; OXYGEN PLASMA TREATMENTS; RADIO FREQUENCIES; REMOTE PLASMA; SPUTTERING METHODS; VOLTAGE APPLICATIONS;

MOS CAPACITORS;

EID: 62249179222 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.8003 Document Type: Article

Times cited : (2)

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