Phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography

Nanotechnology

Volumn 23, Issue 32, 2012, Pages

  Brigo, L ^a   Auzelyte, V ^b   Lister, K A ^b   Brugger, J ^b   Brusatin, G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DENSE PATTERNS; ETCH RATES; ETCHING SELECTIVITY; LINE EDGE ROUGHNESS; MICRO-FTIR; NEGATIVE TONES; NEW HIGH; ORGANIC-INORGANIC HYBRID; POLYSILSESQUIOXANES; POSITIVE TONE; POSTEXPOSURE BAKE; PROCESSING CONDITION; PROCESSING PARAMETERS; SILANOL GROUPS; SILICA NETWORKS; SILICA STRUCTURES; SILICON SUBSTRATES; SWITCHING MECHANISM;

ELECTRON BEAM LITHOGRAPHY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SOL-GELS;

SILICA;

EID: 84864408220     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/32/325302     Document Type: Article

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