Triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 425-428

  Tada, T ^a,c   Kanayama, T ^a,c   Robinson, A P G ^b   Palmer, R E ^b   Allen, M T ^b   Preece, J A ^b   Harris, K D M ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DERIVATIVES; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; THICK FILMS;

ELECTRON DOSE; HIGH ASPECT RATIO SILICON NANOSTRUCTURE; HIGH DRY ETCH DURABILITY; PENTANOL; TRIPHENYLENE DERIVATIVE;

PHOTORESISTS;

EID: 0034205569     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00348-8     Document Type: Article

References (8)

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