Nanometer-scale resolution of calixarene negative resist in electron beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4272-4276

  Fujita, J ^a   Ohnishi, Y ^a   Ochiai, Y ^a   Nomura, E ^a   Matsui, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DERIVATIVES; DURABILITY; ELECTRONS; ETCHING; FABRICATION; FILM PREPARATION; HEURISTIC METHODS; MATHEMATICAL MODELS; NANOTECHNOLOGY; PHOTORESISTS; POLYMETHYL METHACRYLATES; SENSITIVITY ANALYSIS;

CALIXARENES; DOT ARRAY FABRICATION; ELECTRON DOSE; ETCHING DURABILITY; NEGATIVE RESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0030288283     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588589     Document Type: Article

References (6)

1. K. K. Likharev, J. Res. Devel. 21, 114 (1988).
2. Extended abstracts of the 1996 International Conference on Solid State Device and Materials, Yokohama, 1996, pp. 437-439.
3. N. Wamme and Y. Ohnishi, Proc. Am. Chem. Soc., PMSE 67, 451 (1992).
4. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui, Appl. Phys. Lett. 68, 1297 (1996).
5. Y. Ochiai, M. Baba, H. Watanabe, and S. Matsui, Jpn. J. Appl. Phys. 30, 3266 (1991).
6. S. Manako, Y. Ochiai, J. Fujita, N. Samoto, and S. Matsui, Jpn. J. Appl. Phys. 33, 6993 (1994).