3 nm NiCr wires made using electron beam lithography and PMMA resist

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 423-425

  Cumming, D R S ^a   Thoms, S ^a   Weaver, J M R ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; IRRADIATION; MATHEMATICAL MODELS; NANOTECHNOLOGY; NICKEL COMPOUNDS; PHOTORESISTS; POLYMETHYL METHACRYLATES; SUBSTRATES;

NICKEL CHROMIUM WIRES; PROXIMITY EFFECT; SECONDARY ELECTRON PROCESSES;

ELECTRIC WIRE;

EID: 0029770960     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00278-2     Document Type: Article

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