Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Liu, Lilin ^a   Ling, Minjie ^a   Yang, Jianfu ^a   Xiong, Wang ^a   Jia, Weiqing ^a   Wang, Gang ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED FACTOR; ACTIVE LAYER; AGING TIME; BLUE LIGHT EMITTING DIODES; DEGRADATION BEHAVIOR; DEGRADATION MECHANISM; EFFICIENCY DEGRADATION; GAN BASED LED; HIGH TEMPERATURE STRESS; P-TYPE CONDUCTIVITY; RAPID DEGRADATION;

CHEMICAL ACTIVATION; DEFECTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OHMIC CONTACTS;

DEGRADATION;

EID: 84864190730     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712030     Document Type: Article

References (33)

1. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, IEEE J. Sel. Top. Quantum Electron. 8, 310 (2002). 10.1109/2944.999186
2. E. F. Schubert, Light Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, UK, 2006).
3. M. Burmen, F. Pernus, and B. Likar, Meas. Sci. Technol. 19, 122002 (2008). 10.1088/0957-0233/19/12/122002
4. M. Meneghini, L. B. Trevisanello, G. Meneghesso, and E. Eznoni, IEEE Trans. Device Mater. Reliab. 8 (2), 323 (2008). 10.1109/TDMR.2008.921527
5. M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, IEEE Trans. Electron Devices 57 (1), 108 (2010). 10.1109/TED.2009.2033649
6. M. Meneghini, L.R. Trevisanello, U. Zehnder, T. Zahner, U. Strauss, G. Meneghesso, and E. Zanoni, IEEE Trans. Electron Devices 53 (12), 2981 (2006). 10.1109/TED.2006.885544
7. F. Manyakhin, A. Kovalev, and A. E. Yunovich, MRS Internet J. Nitride Semicond. Res. 3, 53 (1998).
8. F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Rigutti, U. Strass, U. Zehnder, and E. Zanoni, J. Appl. Phys. 99, 0531041-7 (2006). 10.1063/1.2178856
9. G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Gavallini, A. Castaldini, G. Scamarcio, S. Du, and I. Eliashevich, in IEEE International Electron Devices Meeting, San Francisco, CA, 08-11 December 2002, Tech. Dig.-Int. Electron Devices Meet. 103-106, 2002.
10. G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich, Phys. Status Solidi. A 194, 389 (2002). 10.1002/1521-396X(200212)194:2<389::AID-PSSA389>3.0.CO;2-O
11. L. B. Huang, T. J. Yu, Z. Z. Chen, Z. X. Qin, Z. J. Yang, and G. Y. Zhang, J. Lumin. 129, 1981 (2009). 10.1016/j.jlumin.2009.04.078
12. S. Bychikhin, D. Pogany, L. K. J. Vandamme, G. Meneghesso, and E. Zanoni, J. Appl. Phys. 97, 1237141-7 (2005). 10.1063/1.1942628
13. S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, IEEE J. Sel. Top. Quantum Electron. 10, 1277 (2004). 10.1109/JSTQE.2004.837735
14. S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, J. Electroceram. 23, 406 (2009). 10.1007/s10832-008-9478-2
15. M. Meneghini, S. Podda, A. Morelli, R. Pintus, L. Trevisanello, G. Meneghesso, M. Vanzi, and E. Zanoni, Microelectron. Reliab. 46, 1720 (2006). 10.1016/j.microrel.2006.07.050
16. C. Y. Hsu, W. H. Lan, and Y. C. Wu, Appl. Phys. Lett. 83, 2447 (2003). 10.1063/1.1601306
17. X. S. Shao, H. Lu, D. J. Chen, Z. L. Xie, R. Zhang, and Y. D. Zheng, Appl. Phys. Lett. 95, 163504 (2009). 10.1063/1.3254237
18. S. Buso, G. Spiazzi, M. Meneghini, and G. Meneghesso, IEEE Trans. Device Mater. Reliab. 8 (2), 312 (2008). 10.1109/TDMR.2008.916549
19. S. Levada, M. Meneghini, E. Zanoni, S. Buso, G. Spiazzi, and G. Meneghesso, in IEEE 44th Annual International Reliability Physics Symposium, San Jose, 2006.
20. M. Meneghini, L. Trevisanello, S. Podda, S. Buso, G. Spiazzi, G. Meneghesso, and E. Zanoni, in Sixth International Conference on Solid State Lighting, edited by, Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, and, Ian E. Ashdown, Proc. SPIE 6337, 63370R (2006).
21. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 96, 151902 (2010). 10.1063/1.3389497
22. M. Meneghini, D. Barbisan, L. Rodighiero, G. Meneghesso, and E. Zanoni, Appl. Phys. Lett. 97, 143506 (2010). 10.1063/1.3497082
23. H. Fang, L. W. Sang, L. B. Zhao, S. L. Qi, Y. Z. Zhang, X. L. Yang, Z. J. Yang, and G. Y. Zhang, Appl. Phys. Lett. 93, 261117 (2008). 10.1063/1.3063044
24. H. Q. Jia, L. W. Guo, W. X. Wang, and H. Chen, Adv. Mater. 21, 4641 (2009). 10.1002/adma.200901349
25. K. Park, M. K. Kwon, S. H. Baek, Y. W. Ok, Y. S. Kim, and D. J. Kim, Appl. Phys. Lett. 87, 061906 (2005). 10.1063/1.2008365
26. A. Tabata, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, A. Kharchenko, T. Frey, D. J. As, D. Schikora, K. Lischka, J. Furthmuller, and F. Bechstedt, Appl. Phys. Lett. 80 (5), 769 (2002). 10.1063/1.1436270
27. Y. Z. Zhang, S. W. Feng, C. S. Guo, G. C. Zhang, S. X. Zhuang, R. Su, Y. X. Bai, and C. Z. Lu, Res. Prog. Solid State Electron. 29 (3), 469 (2009). 10.1007/s10008-008-0587-2
28. W. Gotz, N. M. Johnson, D. P. Bour, M. D. McCluskey, and E. E. Haller, Appl. Phys. Lett. 69, 3725 (1996). 10.1063/1.117202
29. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995). 10.1103/PhysRevLett.75.4452
30. J. Neugebauer and C. G. Van de Walle, Mater. Res. Soc. Symp. Proc. 423, 619 (1996). 10.1557/PROC-423-619
31. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. Part 2 28, L2112 (1989). 10.1143/JJAP.28.L2112
32. X. Li and J. I. Coleman, Appl. Phys. Lett. 69, 1605 (1996). 10.1063/1.117045
33. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, IEEE Electron Device Lett. 23, 535 (2002). 10.1109/LED.2002.802601