Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode

Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

  Fang, H ^a   Sang, L W ^a   Zhao, L B ^a   Qi, S L ^a   Zhang, Y Z ^a   Yang, X L ^a   Yang, Z J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; INDIUM; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; PHOSPHORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM;

DEVICE SURFACES; ELECTROLUMINESCENCE SPECTRUMS; HIGH RESOLUTIONS; INTER-LAYERS; LUMINESCENT PROPERTIES; PYRAMIDAL PITS; RECIPROCAL SPACE MAPPINGS; SCANNING ELECTRONS; WHITE LIGHTS; X-RAY DIFFRACTIONS;

LIGHT EMISSION;

EID: 58149215609     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3063044     Document Type: Article

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