Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Yu, Peichen ^a   Chiu, C H ^a   Wu, Yuh Renn ^b   Yen, H H ^a   Chen, J R ^a   Kao, C C ^a   Yang, Han Wei ^b   Kuo, H C ^a   Lu, T C ^a   Yeh, W Y ^c   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PLASMA INTERACTIONS; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; FOCUSED ION BEAMS; ION BEAMS; ION BOMBARDMENT; LIGHT EMISSION; LUMINESCENCE; MILLING (MACHINING);

MICRO-PHOTOLUMINESCENCE; NANO PILLARS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 51349133996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965461     Document Type: Article

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