Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Jang, Yuseong ^a   Kim, Won Rae ^a   Jang, Dong Hyun ^a   Shim, Jong In ^a   Shin, Dong Soo ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; EPIWAFERS; GAN EPILAYERS; GAN THIN FILMS; MAXIMUM VALUES; NONUNIFORMITY; SAPPHIRE SUBSTRATES; STONEY'S FORMULA; STRESS DISTRIBUTION; VERTICAL DIRECTION; WAFER BENDING;

GALLIUM NITRIDE; SAPPHIRE; STRESS CONCENTRATION; THIN FILMS;

GALLIUM ALLOYS;

EID: 77953641903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436586     Document Type: Article

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