Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes

Semiconductor Science and Technology

Volumn 27, Issue 1, 2012, Pages

  Gong, Z ^a   Liu, N Y ^a,b   Tao, Y B ^a,b   Massoubre, D ^a   Xie, E Y ^a   Hu, X D ^b   Chen, Z Z ^a,b   Zhang, G Y ^b   Pan, Y B ^c   Hao, M S ^c   Watson, I M ^a   Gu, E ^a   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b PEKING UNIVERSITY   (China)

^c Epilight Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND FILLING EFFECTS; BAND FILLINGS; BLUE SHIFT; ELECTRON RESERVOIR; EMISSION WAVELENGTH; EPITAXIAL STRUCTURE; EPITAXIAL WAFERS; FURTHER DEVELOPMENT; GAIN INSIGHT; HIGH CURRENT DENSITIES; HIGH-CURRENT; INGAN LED; INJECTED CARRIERS; INJECTION CURRENTS; LED ARRAYS; OPTICAL PERFORMANCE; OPTICAL POWER DENSITY; OPTOELECTRONIC TWEEZERS; PIEZO-ELECTRIC FIELDS; RADIATIVE COMBINATION; SPECTRAL STABILITY; THERMAL ROLLOVER; VISIBLE LIGHT COMMUNICATIONS; WAFER MATERIAL;

AMBER; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; LIGHT; OPTICAL TWEEZERS; OPTOELECTRONIC DEVICES; PARTICLE OPTICS; SEMICONDUCTOR QUANTUM WELLS; WATER INJECTION;

LIGHT EMITTING DIODES;

EID: 84855444569     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/1/015003     Document Type: Article

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