Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor

Nature Nanotechnology

Volumn 7, Issue 7, 2012, Pages 443-447

  Prati, Enrico ^a   Hori, Masahiro ^b   Guagliardo, Filippo ^c   Ferrari, Giorgio ^d   Shinada, Takahiro ^e  

^a LABORATORIO MDM   (Italy)

^b WASEDA UNIVERSITY   (Japan)

^c POLITECNICO DI MILANO   (Italy)

^d WASEDA UNIVERSITY   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; TRANSISTORS;

COHERENT TRANSPORTS; ELECTRONIC DEVICE; PRECISE POSITIONING; SEQUENTIAL TUNNELLING; SILICON TRANSISTORS; SINGLE-ION IMPLANTATION; STRONGLY CORRELATED SYSTEMS; THERMALLY ACTIVATED;

ATOMS;

ARSENIC;

ANDERSON MOTT TRANSITION; ARTICLE; CONTROLLED STUDY; DENSITY; ELECTRON; LOW TEMPERATURE; MOLECULAR PHYSICS; NANOARRAY; PHASE TRANSITION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84863720479     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2012.94     Document Type: Article

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