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Volumn 99, Issue 24, 2011, Pages

Switching quantum transport in a three donors silicon fin-field effect transistor

(8) Leti, Guillaume a,b Prati, Enrico a Belli, Matteo a Petretto, Guido a,c Fanciulli, Marco a,c Vinet, Maud d Wacquez, Romain e Sanquer, Marc e

a LABORATORIO MDM (Italy)

b Grenoble INP Phelma (France)

c UNIVERSITY OF MILANO BICOCCA (Italy)

d CEA LETI (France)

e UNIV GRENOBLE ALPES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE CURRENT; CONTROL VOLTAGES; METAL-OXIDE; NEUTRAL STATE; PHOSPHORUS DONOR; QUANTUM DEVICE; QUANTUM TRANSPORT; SEMICONDUCTOR TECHNOLOGY;

FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); MOS DEVICES; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; TRANSISTORS;

QUANTUM CHEMISTRY;

EID: 83755184045 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669702 Document Type: Article

Times cited : (20)

References (13)

1
- 77954316804
- 10.1063/1.3273857
- M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, and M. Fanciulli, Appl. Phys. Lett. 95, 242107 (2009). 10.1063/1.3273857
- (2009) Appl. Phys. Lett. , vol.95 , pp. 242107
- Pierre, M.¹ Wacquez, R.² Roche, B.³ Jehl, X.⁴ Sanquer, M.⁵ Vinet, M.⁶ Prati, E.⁷ Belli, M.⁸ Fanciulli, M.⁹

2
- 76649142041
- 10.1038/nnano.2009.373
- M. Pierre, R. Wacquez, X. Jehl, M. Sanquer, M. Vinet, and O. Cueto, Nat. Nanotechnol. 5, 133 (2010). 10.1038/nnano.2009.373
- (2010) Nat. Nanotechnol. , vol.5 , pp. 133
- Pierre, M.¹ Wacquez, R.² Jehl, X.³ Sanquer, M.⁴ Vinet, M.⁵ Cueto, O.⁶

3
- 84860389332
- 10.1063/1.3622141
- M. Hori, T. Shinada, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, and I. Ohdomari, Appl. Phys. Lett. 99, 062103 (2011). 10.1063/1.3622141
- (2011) Appl. Phys. Lett. , vol.99 , pp. 062103
- Hori, M.¹ Shinada, T.² Ono, Y.³ Komatsubara, A.⁴ Kumagai, K.⁵ Tanii, T.⁶ Endoh, T.⁷ Ohdomari, I.⁸

4
- 79951491626
- 10.1063/1.3551735
- E. Prati, M. Belli, S. Cocco, G. Petretto, and M. Fanciulli, Appl. Phys. Lett. 98, 053109 (2011). 10.1063/1.3551735
- (2011) Appl. Phys. Lett. , vol.98 , pp. 053109
- Prati, E.¹ Belli, M.² Cocco, S.³ Petretto, G.⁴ Fanciulli, M.⁵

5
- 83655215393
- 10.1186/1556-276X-6-479
- D. Moraru, A. Udhiarto, M. Anwar, R. Nowak, R. Jablonski, E. Hamid, J. C. Tarido, T. Mizuno, and M. Tabe, Nanoscale Res. Lett. 6, 479 (2011). 10.1186/1556-276X-6-479
- (2011) Nanoscale Res. Lett. , vol.6 , pp. 479
- Moraru, D.¹ Udhiarto, A.² Anwar, M.³ Nowak, R.⁴ Jablonski, R.⁵ Hamid, E.⁶ Tarido, J.C.⁷ Mizuno, T.⁸ Tabe, M.⁹

6
- 48749117974
- 10.1038/nphys994
- G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Nat. Phys. 4, 656 (2008). 10.1038/nphys994
- (2008) Nat. Phys. , vol.4 , pp. 656
- Lansbergen, G.P.¹ Rahman, R.² Wellard, C.J.³ Woo, I.⁴ Caro, J.⁵ Collaert, N.⁶ Biesemans, S.⁷ Klimeck, G.⁸ Hollenberg, L.C.L.⁹ Rogge, S.¹⁰

7
- 72849139808
- 10.1103/PhysRevB.80.165331
- E. Prati, R. Latempa, and M. Fanciulli, Phys. Rev. B 80, 165331 (2009). 10.1103/PhysRevB.80.165331
- (2009) Phys. Rev. B , vol.80 , pp. 165331
- Prati, E.¹ Latempa, R.² Fanciulli, M.³

8
- 74849127703
- 10.1021/nl901635j
- K. Y. Tan, K. W. Chan, M. Möttönen, A. Morello, C. Yang, J. van Donkelaar, A. Alves, J.-M. Pirkkalainen, D. N. Jamieson, R. G. Clark, and A. S. Dzurak, Nano Lett. 10, 11 (2010). 10.1021/nl901635j
- (2010) Nano Lett. , vol.10 , pp. 11
- Tan, K.Y.¹ Chan, K.W.² Möttönen, M.³ Morello, A.⁴ Yang, C.⁵ Van Donkelaar, J.⁶ Alves, A.⁷ Pirkkalainen, J.-M.⁸ Jamieson, D.N.⁹ Clark, R.G.¹⁰ Dzurak, A.S.¹¹

9
- 27144439056
- Theory of the stark effect for P donors in Si
- DOI 10.1103/PhysRevLett.94.186403, 186403
- M. Friesen, Phys. Rev. Lett. 94, 186403 (2005). 10.1103/PhysRevLett.94. 186403 (Pubitemid 41493065)
- (2005) Physical Review Letters , vol.94 , Issue.18 , pp. 1-4
- Friesen, M.¹

10
- 77249086206
- 10.1063/1.3318271
- J. Verduijn, G. C. Tettamanzi, G. P. Lansbergen, N. Collaert, S. Biesemans, and S. Rogge, Appl. Phys. Lett. 96, 072110 (2010). 10.1063/1.3318271
- (2010) Appl. Phys. Lett. , vol.96 , pp. 072110
- Verduijn, J.¹ Tettamanzi, G.C.² Lansbergen, G.P.³ Collaert, N.⁴ Biesemans, S.⁵ Rogge, S.⁶

11
- 77956335345
- 10.1103/PhysRevB.81.235318
- H. Huebl, C. D. Nugroho, A. Morello, C. C. Escott, M. A. Eriksson, C. Yang, D. N. Jamieson, R. G. Clark, and A. S. Dzurak, Phys. Rev. B 81, 235318 (2010). 10.1103/PhysRevB.81.235318
- (2010) Phys. Rev. B , vol.81 , pp. 235318
- Huebl, H.¹ Nugroho, C.D.² Morello, A.³ Escott, C.C.⁴ Eriksson, M.A.⁵ Yang, C.⁶ Jamieson, D.N.⁷ Clark, R.G.⁸ Dzurak, A.S.⁹

12
- 0004005306
- 3rd ed. (Wiley, New York)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007), p. 360.
- (2007) Physics of Semiconductor Devices , pp. 360
- Sze, S.M.¹ Ng, K.K.²

13
- 69549119970
- 10.1140/epjb/e2009-00258-4
- M. Pierre, M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet, and S. Deleonibus, Eur. Phys. J. B 70, 475 (2009). 10.1140/epjb/e2009-00258-4
- (2009) Eur. Phys. J. B , vol.70 , pp. 475
- Pierre, M.¹ Hofheinz, M.² Jehl, X.³ Sanquer, M.⁴ Molas, G.⁵ Vinet, M.⁶ Deleonibus, S.⁷

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