Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Hori, Masahiro ^a   Shinada, Takahiro ^b   Taira, Keigo ^a   Komatsubara, Akira ^a   Ono, Yukinori ^c   Tanii, Takashi ^a   Endoh, Tetsuo ^d   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c NTT Basic Research Laboratories   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTION EFFICIENCY; DOPANT IONS; LOW PROBABILITY; SECONDARY ELECTRONS; SINGLE-ION; SINGLE-ION IMPLANTATION; SUBSTRATE BIAS VOLTAGES;

ION IMPLANTATION; SEMICONDUCTOR DOPING;

BIAS VOLTAGE;

EID: 79954430803     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.046501     Document Type: Article

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