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Volumn 100, Issue 21, 2012, Pages

Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DYNAMICS; CHARGE-TRANSFER DYNAMICS; FANO FACTOR; FIELD INDEPENDENTS; IONIZATION STATE; MOS-FET; SIDE GATE; SINGLE DONOR;

EID: 84861838001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721433     Document Type: Article
Times cited : (27)

References (20)
  • 1
    • 0032516155 scopus 로고    scopus 로고
    • 10.1038/30156
    • B. E. Kane, Nature 393, 133 (1998). 10.1038/30156
    • (1998) Nature , vol.393 , pp. 133
    • Kane, B.E.1
  • 3
    • 27144439056 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.94.186403
    • M. Friesen, Phys. Rev. Lett. 94, 186403 (2005). 10.1103/PhysRevLett.94. 186403
    • (2005) Phys. Rev. Lett. , vol.94 , pp. 186403
    • Friesen, M.1
  • 8
    • 0037304689 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.67.085316
    • D. A. Bagrets and Y. V. Nazarov, Phys. Rev. B 67, 085316 (2003). 10.1103/PhysRevB.67.085316
    • (2003) Phys. Rev. B , vol.67 , pp. 085316
    • Bagrets, D.A.1    Nazarov, Y.V.2
  • 11
    • 84861834398 scopus 로고    scopus 로고
    • E-APPLAB-100-049222 for further details on the device structure and fabrication process; the plot of a stability diagram acquired on a device fabricated on p-type silicon; and detailed information on the experimental procedure and the extraction of lever arm factors
    • See supplementary material at http://dx.doi.org/10.1063/1.4721433 E-APPLAB-100-049222 for further details on the device structure and fabrication process; the plot of a stability diagram acquired on a device fabricated on p-type silicon; and detailed information on the experimental procedure and the extraction of lever arm factors.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.