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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 565-568

Analysis of the formation conditions for large area epitaxial graphene on SiC substrates

(7) Yakimova, R a Virojanadara, C a Gogova, D b Syvajarvi M a Siche, D b Larsson, K c Johansson, L I a

a LINKÖPING UNIVERSITY (Sweden)

b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

c UPPSALA UNIVERSITY (Sweden)

Author keywords

Ar pressure; ARPES; DFT; High temperature; LEEM; Sublimation

Indexed keywords

ATMOSPHERIC PRESSURE; SILICON CARBIDE; SUBLIMATION; SUBSTRATES;

AR PRESSURES; ARPES; FORMATION CONDITION; FORMATION MECHANISM; HIGH TEMPERATURE; LARGE-AREA GRAPHENE; LEEM; THICKNESS UNIFORMITY;

GRAPHENE;

EID: 77955461167 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.565 Document Type: Conference Paper

Times cited : (73)

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