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Volumn 22, Issue 29, 2012, Pages 14617-14623

Crystalline nanostructure and morphology of TriF-IF-dione for high-performance stable n-type field-effect transistors

(9) Kim, Beom Joon a Park, Young Il b Kim, Hyo Jung c Ahn, Kwangseok a Lee, Dong Ryeol a Kim, Do Hwan d Oh, Se Young e Park, Jong Wook b Cho, Jeong Ho f

a Soongsil University (South Korea)

b The Catholic University of Korea (South Korea)

c Seoul National University (South Korea)

d Stanford University (United States)

e Sogang University (South Korea)

f Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE MODULATION; CHARGE TRAP; COMPLEMENTARY INVERTERS; CRYSTALLINE NANOSTRUCTURE; CURRENT RATIOS; DEVICE PERFORMANCE; DIELECTRIC INTERFACE; DIELECTRIC SURFACE; ELECTRICAL CHARACTERISTIC; ELECTRICAL STABILITY; ELECTRON-DONATING CHARACTERISTICS; FIELD-EFFECT MOBILITIES; HIGH ACTIVATION ENERGY; ORGANIC INTERLAYERS; P-TYPE PENTACENE; POLYMERIC LAYERS;

ACTIVATION ENERGY; COMPOSITE FILMS; CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; NANOSTRUCTURES; ORGANIC FIELD EFFECT TRANSISTORS; POLYSTYRENES; SELF ASSEMBLED MONOLAYERS; SURFACE PROPERTIES;

ELECTRIC PROPERTIES;

EID: 84863642051 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm31698f Document Type: Article

Times cited : (5)

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