High performance n-Type field-effect transistors based on indenofluorenedione and diindenopyrazinedione derivatives

Chemistry of Materials

Volumn 20, Issue 8, 2008, Pages 2615-2617

  Nakagawa, Tomohiro ^a   Kumaki, Daisuke ^b   Nishida, Jun Ichi ^a   Tokito, Shizuo ^b   Yamashita, Yoshiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DERIVATIVES; SUBSTITUTION REACTIONS; THIN FILMS; THRESHOLD VOLTAGE;

DIINDENOPYRAZINEDIONE DERIVATIVES; INDENOFLUORENEDIONE; NONSUBSTITUTED INDENOFLUORENEDIONE; PYRAZINE RINGS;

FIELD EFFECT TRANSISTORS;

EID: 43249095716     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm800366b     Document Type: Article

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