Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1 0 0) using (CpMe) 3 Er precursor and ozone

Applied Surface Science

Volumn 258, Issue 22, 2012, Pages 8514-8520

  Xu, Runshen ^a   Tao, Qian ^a   Yang, Yi ^a   Takoudis, Christos G ^a,b  

^a University of Illinois at Chicago   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Atomic layer deposition; Erbium oxide; Gate dielectric; Ozone; Tris(methylcyclopentadienyl)erbium

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; CARBON FILMS; DIELECTRIC MATERIALS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATE DIELECTRICS; INTERFACES (MATERIALS); OXIDE FILMS; OZONE; OZONE LAYER; SILICATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; ATOMIC LAYER DEPOSITED; CARBON CONTAMINATION; ELECTRICAL CHARACTERIZATION; ERBIUM OXIDE; GLANCING INCIDENCE X-RAY DIFFRACTIONS; POST DEPOSITION ANNEALING; X-RAY PHOTOELECTRONS;

ERBIUM COMPOUNDS;

EID: 84863512890     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.019     Document Type: Article

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