Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2468-2471

  Wan, H J ^a   Zhou, P ^a   Ye, L ^a   Lin, Y Y ^a   Wu, J G ^b   Wu, H ^b   Chi, M H ^b  

^a FUDAN UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED TEST METHODS; ARRHENIUS EQUATION; COMBINED MODEL; DATA RETENTION; ELEVATED TEMPERATURE; FAILURE MECHANISM; GOOD DATA; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY DEVICE;

APPROXIMATION THEORY;

EID: 72849139199     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3264690     Document Type: Conference Paper

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