Electrical bistability and negative differential resistance in single Sb-doped ZnO nanobelts/SiOx/p-Si heterostructured devices

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Yang, Ya ^a   Qi, Junjie ^a   Guo, Wen ^a   Qin, Zi ^a   Zhang, Yue ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL BISTABILITY; ENERGY-BAND DIAGRAM; FABRICATED DEVICE; INDUCED CHARGES; NEGATIVE DIFFERENTIAL RESISTANCES; P-TYPE SI; SB-DOPED; ULTRA-VIOLET LIGHT;

CHARGE TRANSFER; ION EXCHANGE; NEGATIVE RESISTANCE; ULTRAVIOLET RADIATION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77949395594     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3339873     Document Type: Article

References (15)

1. J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science SCIEAS 0036-8075 286, 1550 (1999). 10.1126/science.286.5444.1550
2. J. Tseng, J. Huang, J. Quyang, R. Kaner, and Y. Yang, Nano Lett. NALEFD 1530-6984 5, 1077 (2005). 10.1021/nl050587l
3. L. Esaki and P. J. Stiles, Phys. Rev. Lett. PRLTAO 0031-9007 16, 1108 (1966). 10.1103/PhysRevLett.16.1108
4. C. N. Lau, D. R. Stewart, R. S. Williams, and M. Bockrath, Nano Lett. NALEFD 1530-6984 4, 569 (2004). 10.1021/nl035117a
5. Z. L. Wang, Mater. Sci. Eng. R. MIGIEA 0927-796X 64, 33 (2009). 10.1016/j.mser.2009.02.001
6. K. H. Liu, P. Gao, Z. Xu, X. D. Bai, and E. G. Wang, Appl. Phys. Lett. APPLAB 0003-6951 92, 213105 (2008). 10.1063/1.2936080
7. P. Gao, Z. Z. Wang, K. H. Liu, Z. Xu, W. L. Wang, X. D. Bai, and E. G. Wang, J. Mater. Chem. JMACEP 0959-9428 19, 1002 (2009). 10.1039/b816791e
8. S. Y. Bae, C. W. Na, J. H. Kang, and J. Park, J. Phys. Chem. B JPCBFK 1089-5647 109, 2526 (2005). 10.1021/jp0458708
9. Y. Yang, J. J. Qi, Y. Zhang, Q. L. Liao, L. D. Tang, and Z. Qin, Appl. Phys. Lett. APPLAB 0003-6951 92, 183117 (2008). 10.1063/1.2926392
10. Y. Yang, Q. L. Liao, J. J. Qi, Y. Zhang, L. D. Tang, and N. Ye, Appl. Phys. Lett. APPLAB 0003-6951 93, 133101 (2008). 10.1063/1.2981519
11. Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, Chem. Phys. Lett. CHPLBC 0009-2614 358, 83 (2002). 10.1016/S0009-2614(02)00582-1
12. J. Q. Hu and Y. Bando, Appl. Phys. Lett. APPLAB 0003-6951 82, 1401 (2003). 10.1063/1.1558899
13. J. A. Aranovich, D. Golmayo, A. L. Fahrenbuch, and R. H. Bube, J. Appl. Phys. JAPIAU 0021-8979 51, 4260 (1980). 10.1063/1.328243
14. B. C. Das and A. J. Pal, Small SMALBC 1613-6810 4, 542 (2008). 10.1002/smll.200700985
15. J. G. Simmons and P. R. Verderber, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 301, 77 (1967). 10.1098/rspa.1967.0191