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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

(5) Choi, Woong a,b Kim, Sunkook b Jin, Yong Wan b Lee, Sang Yoon b Sands, Timothy D a,c

a University of California Berkeley (United States)

b SAMSUNG Electronics (South Korea)

c PURDUE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; C-V MEASUREMENT; CAPACITANCE VOLTAGE; DEPLETION REGION; DEPOLARIZATION FIELDS; DEVICE APPLICATION; ELECTRICAL BEHAVIORS; HETEROSTRUCTURES; METAL CAPACITORS; METALFERROELECTRIC-SEMICONDUCTOR; OXIDE HETEROSTRUCTURES; QUANTITATIVE INVESTIGATION; THEORETICAL MODELS;

CAPACITANCE; CAPACITORS; CARRIER CONCENTRATION; CRYSTALS; EPITAXIAL GROWTH; FERROELECTRICITY; METALS;

HETEROJUNCTIONS;

EID: 79952659869 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3561751 Document Type: Article

Times cited : (24)

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