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Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

(5) Shaposhnikov, A V a Perevalov, T V a Gritsenko, V A a Cheng, C H b Chin, A b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DIELECTRIC; CHARGE-TRANSPORT MODEL; ELECTRON EFFECTIVE MASS; HIGH RESISTANCE; LOW RESISTANCE; LOW-RESISTANCE STATE; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SWITCHING VOLTAGES; TRAP CONCENTRATION; TRAP ENERGY;

DENSITY FUNCTIONAL THEORY; PHONONS; TANTALUM COMPOUNDS;

GERMANIUM OXIDES;

EID: 84863326064 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4729589 Document Type: Article

Times cited : (67)

References (25)

1
- 41149099157
- 10.1126/science.1153909
- G. I. Meijer, Science 319, 1626 (2008). 10.1126/science.1153909
- (2008) Science , vol.319 , pp. 1626
- Meijer, G.I.¹

2
- 76649133422
- 10.1038/nnano.2009.456
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. Seong Hwang, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Seong Hwang, C.¹²

3
- 79956107859
- 10.1088/0957-4484/22/25/254022
- D. Ielimini, F. Nardi, and C. Cadli, Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
- (2011) Nanotechnology , vol.22 , pp. 254022
- Ielimini, D.¹ Nardi, F.² Cadli, C.³

4
- 71549167991
- 10.1063/1.3265947
- W. B. Chen and A. Chin, Appl. Phys. Lett. 95, 212105 (2009). 10.1063/1.3265947
- (2009) Appl. Phys. Lett. , vol.95 , pp. 212105
- Chen, W.B.¹ Chin, A.²

5
- 71549119915
- D. S. Yu, A. Chin, C. H. Wu, M.-F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, and S. P. McAlister, Tech. Dig.-Int. Electron Devices Meet. 2005, 649.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 649
- Yu, D.S.¹ Chin, A.² Wu, C.H.³ Li, M.-F.⁴ Zhu, C.⁵ Wang, S.J.⁶ Yoo, W.J.⁷ Hung, B.F.⁸ McAlister, S.P.⁹

6
- 77957863654
- C. H. Cheng, A. Chin, and F. S. Yeh, Dig. Tech. Pap.-Symp. VLSI Technol. 2010, 85.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2010 , pp. 85
- Cheng, C.H.¹ Chin, A.² Yeh, F.S.³

7
- 78649563339
- A. Chin, C. C. Laio, K. C. Chiang, D. S. Yu, W. J. Yoo, G. S. Samudra, S. P. McAlister, and C. C. Chi, Tech. Dig. - Int. Electron Devices Meet. 2005, 165.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 165
- Chin, A.¹ Laio, C.C.² Chiang, K.C.³ Yu, D.S.⁴ Yoo, W.J.⁵ Samudra, G.S.⁶ McAlister, S.P.⁷ Chi, C.C.⁸

8
- 0000832861
- 10.1103/PhysRevB.61.10361
- S. D. Ganichev, E. Ziemann, W. Prettl, I. N. Yassievich, A. A. Istratov, and E. R. Weber, Phys. Rev. B 61, 10361 (2000). 10.1103/PhysRevB.61.10361
- (2000) Phys. Rev. B , vol.61 , pp. 10361
- Ganichev, S.D.¹ Ziemann, E.² Prettl, W.³ Yassievich, I.N.⁴ Istratov, A.A.⁵ Weber, E.R.⁶

9
- 0000212751
- 10.1063/1.372423
- E. Ziemann, S. D. Ganichev, W. Prettl, I. N. Yassievich, and V. I. Perel, J. Appl. Phys. 87, 3843 (2000) 10.1063/1.372423
- (2000) J. Appl. Phys. , vol.87 , pp. 3843
- Ziemann, E.¹ Ganichev, S.D.² Prettl, W.³ Yassievich, I.N.⁴ Perel, V.I.⁵

10
- 0037164874
- 10.1088/0953-8984/14/50/201
- S. D. Ganichev, I. N. Yassievich, and W. Prettl, J. Phys.: Condens. Matter 14, R1263 (2002). 10.1088/0953-8984/14/50/201
- (2002) J. Phys.: Condens. Matter , vol.14 , pp. 1263
- Ganichev, S.D.¹ Yassievich, I.N.² Prettl, W.³

11
- 79959529196
- 10.1063/1.3587452
- K. A. Nasyrov and V. A. Gritsenko, J. Appl. Phys. 109, 097705 (2011). 10.1063/1.3587452
- (2011) J. Appl. Phys. , vol.109 , pp. 097705
- Nasyrov, K.A.¹ Gritsenko, V.A.²

12
- 0001172570
- 10.1103/PhysRevLett.59.125
- S. Miyazaki, Y. Ihara, and M. Hirose, Phys. Rev. Lett. 59, 125 (1987). 10.1103/PhysRevLett.59.125
- (1987) Phys. Rev. Lett. , vol.59 , pp. 125
- Miyazaki, S.¹ Ihara, Y.² Hirose, M.³

13
- 0000535841
- 10.1103/PhysRevB.57.R2081
- V. A. Gritsenko, E. E. Meerson, and Yu. N. Morokov, Phys. Rev. B 57, R2081 (1998). 10.1103/PhysRevB.57.R2081
- (1998) Phys. Rev. B , vol.57 , pp. 2081
- Gritsenko, V.A.¹ Meerson, E.E.² Morokov, Yu.N.³

14
- 0346215983
- 10.1063/1.1629373
- S. Meng, C. Basceri, B. W. Busch, G. Derderian, and G. Sandhu, Appl. Phys. Lett. 83, 4429 (2003). 10.1063/1.1629373
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4429
- Meng, S.¹ Basceri, C.² Busch, B.W.³ Derderian, G.⁴ Sandhu, G.⁵

15
- 70349568754
- 10.1088/0953-8984/21/39/395502
- P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. D. Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. P. Seitsonen, A. Smogunov, P. Umari, and R. M. Wentzcovitch, J. Phys.: Condens. Matter 21, 395502 (2009). 10.1088/0953-8984/21/39/395502
- (2009) J. Phys.: Condens. Matter , vol.21 , pp. 395502
- Giannozzi, P.¹ Baroni, S.² Bonini, N.³ Calandra, M.⁴ Car, R.⁵ Cavazzoni, C.⁶ Ceresoli, D.⁷ Chiarotti, G.L.⁸ Cococcioni, M.⁹ Dabo, I.¹⁰ Corso, A.D.¹¹ De Gironcoli, S.¹² Fabris, S.¹³ Fratesi, G.¹⁴ Gebauer, R.¹⁵ Gerstmann, U.¹⁶ Gougoussis, C.¹⁷ Kokalj, A.¹⁸ Lazzeri, M.¹⁹ Martin-Samos, L.²⁰ more..

16
- 64349092645
- 10.1063/1.3116612
- P. Broqvist, J. F. Binder, and A. Pasquarello, Appl. Phys. Lett. 94, 141911 (2009). 10.1063/1.3116612
- (2009) Appl. Phys. Lett. , vol.94 , pp. 141911
- Broqvist, P.¹ Binder, J.F.² Pasquarello, A.³

17
- 77956469769
- 10.1016/j.mseb.2010.03.060
- C. V. Ramanana, G. Carbajal-Franko, R. S. Vemuri, I. B. Troitskaia, S. A. Gromolov, and V. V. Atuchin, Mater. Sci. Eng., B 174, 279 (2010). 10.1016/j.mseb.2010.03.060
- (2010) Mater. Sci. Eng., B , vol.174 , pp. 279
- Ramanana, C.V.¹ Carbajal-Franko, G.² Vemuri, R.S.³ Troitskaia, I.B.⁴ Gromolov, S.A.⁵ Atuchin, V.V.⁶

18
- 0001573229
- 10.1103/PhysRevB.15.3193
- B. Fischer, R. A. Pollak, T. H. DiStefano, and W. D. Grobman, Phys. Rev. B 15, 3193 (1977). 10.1103/PhysRevB.15.3193
- (1977) Phys. Rev. B , vol.15 , pp. 3193
- Fischer, B.¹ Pollak, R.A.² Distefano, T.H.³ Grobman, W.D.⁴

19
- 0004107040
- Gordon and Breach Science, Langhorne
- J.-J. Yeh, Atomic Calculation of Photoionization Cross-Sections and Asymmetry Parameters (Gordon and Breach Science, Langhorne, 1993).
- (1993) Atomic Calculation of Photoionization Cross-Sections and Asymmetry Parameters
- Yeh, J.-J.¹

20
- 67650215037
- 10.1063/1.3151711
- K. A. Nasyrov, S. S. Shaimeev, V. A. Gritsenko, and J. H. Han, J. Appl. Phys. 105, 123709 (2009). 10.1063/1.3151711
- (2009) J. Appl. Phys. , vol.105 , pp. 123709
- Nasyrov, K.A.¹ Shaimeev, S.S.² Gritsenko, V.A.³ Han, J.H.⁴

21
- 66749111171
- 10.1063/1.3151861
- Yu. N. Novikov, V. A. Gritsenko, and K. A. Nasyrov, Appl. Phys. Lett. 94, 222904 (2009). 10.1063/1.3151861
- (2009) Appl. Phys. Lett. , vol.94 , pp. 222904
- Novikov, Yu.N.¹ Gritsenko, V.A.² Nasyrov, K.A.³

22
- 13744255330
- 10.1063/1.1849428
- O. Blank, H. Reisinger, R. Stengl, M. Gutsche, F. Wiest, V. Capodieci, J. Schulze, and I. Eisele, J. Appl. Phys. 97, 044107 (2005). 10.1063/1.1849428
- (2005) J. Appl. Phys. , vol.97 , pp. 044107
- Blank, O.¹ Reisinger, H.² Stengl, R.³ Gutsche, M.⁴ Wiest, F.⁵ Capodieci, V.⁶ Schulze, J.⁷ Eisele, I.⁸

23
- 0036477562
- 10.1109/55.981318
- W. J. Zhu, T.-P. Ma, J. Kim, and Y. Di, IEEE Electron Device Lett. 23, 97 (2002). 10.1109/55.981318
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 97
- Zhu, W.J.¹ Ma, T.-P.² Kim, J.³ Di, Y.⁴

24
- 0041511849
- 10.1063/1.1594829
- H. T. Takeuchi and T.-J. King, Appl. Phys. Lett. 83, 788 (2003). 10.1063/1.1594829
- (2003) Appl. Phys. Lett. , vol.83 , pp. 788
- Takeuchi, H.T.¹ King, T.-J.²

25
- 0000954294
- 10.1063/1.373587
- M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000). 10.1063/1.373587
- (2000) J. Appl. Phys. , vol.87 , pp. 8615
- Houssa, M.¹ Tuominen, M.² Naili, M.³ Afanas'ev, V.⁴ Stesmans, A.⁵ Haukka, S.⁶ Heyns, M.M.⁷

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