Microstructure and dielectric characteristics of high-k tetragonal ZrO 2 films with various thicknesses processed by sol-gel method

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 4, 2012, Pages 3350-3354

  Hwang, Soo Min ^a   Lee, Seung Muk ^a   Choi, Jun Hyuk ^a   Park, Kyung ^a   Joo, Jinho ^a   Lim, Jun Hyung ^a   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Dielectric; Interfacial layer; Sol gel; Tetragonal; ZrO 2

Indexed keywords

ACETYLACETONATES; CAPACITANCE-VOLTAGE CURVE; DIELECTRIC CHARACTERISTICS; DIELECTRIC PERFORMANCE; FLAT-BAND VOLTAGE; GATE-LEAKAGE CURRENT; INTERFACIAL LAYER; K-VALUES; PHASE FORMATIONS; SI SUBSTRATES; T-PHASE; TETRAGONAL; ZRO 2;

DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOS CAPACITORS; SILICON; SOL-GEL PROCESS; SOL-GELS; ZIRCONIUM;

ZIRCONIUM ALLOYS;

EID: 84863322672     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.5630     Document Type: Conference Paper

References (22)

1. S. Guha and V. Narayanan, Annu. Rev. Mater. Res. 39, 181 (2009).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).
4. H. Park, M. Hasan, M. Jo, and H. Hwang, Electron. Mater. Lett. 3, 75 (2007).
5. J. C. Park, S. Hwang, J.-M. Kim, J. K. Kim, J. H. Seo, D.-K. Choi, H. S. Lee, and H. Cho, Electron. Mater. Lett. 6, 107 (2010).
6. H. Kim, K. C. Saraswat, and P. C. McIntyre, J. Mater. Res. 20, 3125 (2005).
7. Y.-H. Wu, M.-L. Wu, J.-R. Wu, and L.-L. Chen, Appl. Phys. Lett. 97, 043503 (2010).
8. L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego, S. Schamm-Chardon, P. E. Coulon, and M. Fanciulli, Appl. Phys. Lett. 95, 122902 (2009).
9. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 075105 (2002).
10. J. Robertson, J. Appl. Phys. 104, 124111 (2008).
11. S. K. Dey, C.-G. Wang, D. Tang, M. J. Kim, R. W. Carpenter, C. Werkhoven, and E. Shero, J. Appl. Phys. 93, 4144 (2003).
12. P. Aldebert and J. P. Traverse, J. Am. Ceram. Soc. 68, 34 (1985).
13. S. Van Elshocht, A. Hardy, C. Adelmann, M. Caymax, T. Conard, A. Franquet, O. Richard, M. K. Van Bael, J. Mullens, and S. D. Gendta, J. Electrochem. Soc. 155, G91 (2008).
14. H. Döscher, G. Lilienkamp, P. Iskra, W. Daum, G. Helsch, S. Becker, R. J. Wrobel, H. Weiss, and Y. Suchorski, J. Appl. Phys. 107, 094103 (2010).
15. M. S. Lee, C.-H. An, J. H. Lim, J.-H. Joo, H.-J. Lee, and H. Kim, J. Electrochem. Soc. 157, G142 (2010).
16. A. Navrotsky, J. Mater. Chem. 15, 1883 (2005).
17. X. Wu, D. Landheer, M. J. Graham, H.-W. Chen, T.-Y. Huang, and T.-S. Chao, J. Cryst. Growth 250, 479 (2003).
18. A. Hardy, S. Van Elshocht, C. Adelmann, T. Conard, A. Franquet, O. Douhéret, I. Haeldermans, J. D'Haen, S. De Gendt, M. Caymax, M. Heyns, M. D'Olieslaeger, M. K. Van Bael, and J. Mullens, Thin Solid Films 516, 8343 (2008).
19. K. Seo, P. C. McIntyre, H. Kim, and K. C. Saraswat, Appl. Phys. Lett. 86, 082904 (2005).
20. J.-C. Lee, S.-J. Oh, M. Cho, C.-S. Hwang, and R. Jung, Appl. Phys. Lett. 84, 1305 (2004).
21. T. S. Jeon, J. M. White, and D. L. Kwong, Appl. Phys. Lett. 78, 368 (2001).
22. K. Kukli, M. Ritala, J. Aarik, T. Uustare, and M. Leskelä, J. Appl. Phys. 92, 1833 (2002).