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Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

Mechanism of sidewall necking and bowing in the plasma etching of high aspect-ratio contact holes

(5) Lee, Jin Kwan a Jang, Il Yong a Lee, Seung Haeng a Kim, Chang Koo b Moon, Sang Heup a

a Seoul National University (South Korea)

b Ajou University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; B-Y IONS; CONTACT HOLES; ETCH PROFILE; FARADAY CAGE; HIGH ASPECT RATIO; LATERAL ETCHING; OVER-ETCHING; REDEPOSITION;

PHOTOLITHOGRAPHY; PLASMA ETCHING; SILICON COMPOUNDS;

ASPECT RATIO;

EID: 76349091392 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3276511 Document Type: Article

Times cited : (37)

References (26)

1
- 49749085683
- JJAPA5 0021-4922, 10.1143/JJAP.47.1435
- H. Abe, M. Yoneda, and N. Fujiwara, Jpn. J. Appl. Phys. JJAPA5 0021-4922, 47, 1435 (2008). 10.1143/JJAP.47.1435
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 1435
- Abe, H.¹ Yoneda, M.² Fujiwara, N.³

2
- 65649151954
- ECSTF8 1938-5862, (), 10.1149/1.3035366
- D. Koehler and D. Fischer, ECS Trans. ECSTF8 1938-5862, 13 (8), 47 (2008). 10.1149/1.3035366
- (2008) ECS Trans. , vol.13 , Issue.8 , pp. 47
- Koehler, D.¹ Fischer, D.²

3
- 25444531737
- Profile control in high aspect ratio contact hole etching by a capacitively coupled plasma source
- DOI 10.1016/j.mee.2005.07.001, PII S0167931705003138
- T. F. Yen, K. J. Chang, and K. -F. Chiu, Microelectron. Eng. MIENEF 0167-9317, 82, 129 (2005). 10.1016/j.mee.2005.07.001 (Pubitemid 41375883)
- (2005) Microelectronic Engineering , vol.82 , Issue.2 , pp. 129-135
- Yen, T.F.¹ Chang, K.J.² Chiu, K.-F.³

4
- 67650602026
- JESOAN 0013-4651, 10.1149/1.3138134
- J. -K. Lee, I. -Y. Jang, S. -H. Lee, C. -K. Kim, and S. H. Moon, J. Electrochem. Soc. JESOAN 0013-4651, 156, D269 (2009). 10.1149/1.3138134
- (2009) J. Electrochem. Soc. , vol.156 , pp. 269
- Lee, J.-K.¹ Jang, I.-Y.² Lee, S.-H.³ Kim, C.-K.⁴ Moon, S.H.⁵

5
- 0031118260
- JAPNDE 0021-4922, 10.1143/JJAP.36.2470
- N. Ikegami, A. Yabata, T. Matsui, J. Kanamori, and Y. Horiike, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922, 36, 2470 (1997). 10.1143/JJAP.36.2470
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 2470
- Ikegami, N.¹ Yabata, A.² Matsui, T.³ Kanamori, J.⁴ Horiike, Y.⁵

6
- 0042918052
- ESLEF6 1099-0062, 10.1149/1.1594412
- H. -K. Ryu, B. -S. Lee, S. -K. Park, I. -W. Kim, and C. -K. Kim, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 6, C126 (2003). 10.1149/1.1594412
- (2003) Electrochem. Solid-State Lett. , vol.6 , pp. 126
- Ryu, H.-K.¹ Lee, B.-S.² Park, S.-K.³ Kim, I.-W.⁴ Kim, C.-K.⁵

7
- 0035271696
- 2 with equipment and feature scale models
- DOI 10.1116/1.1349728
- D. Zhang and M. J. Kushner, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 19, 524 (2001). 10.1116/1.1349728 (Pubitemid 32394425)
- (2001) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.19 , Issue.2 , pp. 524-538
- Zhang, D.¹ Kushner, M.J.²

8
- 37549048165
- JAPNDE 0021-4922, 10.1143/JJAP.46.7870
- M. Izawa, N. Negishi, K. Yokogawa, and Y. Momonoi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922, 46, 7870 (2007). 10.1143/JJAP.46.7870
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 7870
- Izawa, M.¹ Negishi, N.² Yokogawa, K.³ Momonoi, Y.⁴

9
- 0037207736
- JVTBD9 1071-1023, 10.1116/1.1539063
- M. Boufnichel, S. Aachboun, P. Lefaucheux, and P. Ranson, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 21, 267 (2003). 10.1116/1.1539063
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 267
- Boufnichel, M.¹ Aachboun, S.² Lefaucheux, P.³ Ranson, P.⁴

10
- 0035519150
- Etch mechanisms of low dielectric constant polymers in high density plasmas: Impact of charging effects on profile distortion during the etching process
- DOI 10.1116/1.1420492, 45th International COnference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- D. Fuard, O. Joubert, L. Vallier, M. Assous, P. Berruyer, and R. Blanc, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 19, 2223 (2001). 10.1116/1.1420492 (Pubitemid 34089723)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.6 , pp. 2223-2230
- Fuard, D.¹ Joubert, O.² Vallier, L.³ Assous, M.⁴ Berruyer, P.⁵ Blanc, R.⁶

11
- 0033690241
- Mask charging and profile evolution during chlorine plasma etching of silicon
- DOI 10.1116/1.582157
- K. H. A. Bogart, F. P. Klemens, M. V. Malyshev, J. I. Colonell, V. M. Donnelly, J. T. C. Lee, and J. M. Lane, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 18, 197 (2000). 10.1116/1.582157 (Pubitemid 30896797)
- (2000) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.18 , Issue.1 , pp. 197-206
- Bogart, K.H.A.¹

12
- 1242284610
- JVTAD6 0734-2101, 10.1116/1.1626642
- T. E. F. M. Standaert, C. Hudlund, E. A. Joseph, G. S. Oehrleand T. J. Dalton, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 22, 53 (2004). 10.1116/1.1626642
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 53
- Standaert, T.E.F.M.¹ Hudlund, C.² Joseph, E.A.³ Oehrlein, G.S.⁴ Dalton, T.J.⁵

13
- 0025483252
- JESOAN 0013-4651, 10.1149/1.2087084
- Y. -T. Lii and J. Jorń, J. Electrochem. Soc. JESOAN 0013-4651, 137, 2837 (1990). 10.1149/1.2087084
- (1990) J. Electrochem. Soc. , vol.137 , pp. 2837
- Lii, Y.-T.¹ Jorń, J.²

14
- 0037273430
- JVTAD6 0734-2101, 10.1116/1.1521959
- G. Marcos, A. Rhallabi, and P. Ranson, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 21, 87 (2003). 10.1116/1.1521959
- (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 87
- Marcos, G.¹ Rhallabi, A.² Ranson, P.³

15
- 33748545997
- 3 plasma
- DOI 10.1116/1.2221323
- J. -K. Lee, G. -R. Lee, J. -H. Mand S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 24, 1807 (2006). 10.1116/1.2221323 (Pubitemid 44370770)
- (2006) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.24 , Issue.5 , pp. 1807-1811
- Lee, J.-K.¹ Lee, G.-R.² Min, J.-H.³ Moon, S.H.⁴

16
- 0000719866
- APPLAB 0003-6951, 10.1063/1.91554
- G. D. Boyd, L. A. Coldren, and F. G. Storz, Appl. Phys. Lett. APPLAB 0003-6951, 36, 583 (1980). 10.1063/1.91554
- (1980) Appl. Phys. Lett. , vol.36 , pp. 583
- Boyd, G.D.¹ Coldren, L.A.² Storz, F.G.³

17
- 0035335759
- 4 plasma
- DOI 10.1116/1.1368202
- B. -O. Cho, S. -W. Hwang, G. -R. Lee, and S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 19, 730 (2001). 10.1116/1.1368202 (Pubitemid 32498472)
- (2001) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.19 , Issue.3 , pp. 730-735
- Cho, B.-O.¹ Hwang, S.-W.² Lee, G.-R.³ Sang Heup Moon⁴

18
- 0037838979
- KJCHE6 0256-1115, 10.1007/BF02697259
- J. -H. Ryu, B. -O. Cho, S. -W. Hwang, S. H. Moon, and C. -K. Kim, Korean J. Chem. Eng. KJCHE6 0256-1115, 20, 407 (2003). 10.1007/BF02697259
- (2003) Korean J. Chem. Eng. , vol.20 , pp. 407
- Ryu, J.-H.¹ Cho, B.-O.² Hwang, S.-W.³ Moon, S.H.⁴ Kim, C.-K.⁵

19
- 34548227793
- Angular dependence of Si3 N4 etch rates and the etch selectivity of Si O2 to Si3 N4 at different bias voltages in a high-density C4 F8 plasma
- DOI 10.1116/1.2757180
- J. -K. Lee, G. -R. Lee, J. -H. Mand S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 25, 1395 (2007). 10.1116/1.2757180 (Pubitemid 47330602)
- (2007) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.25 , Issue.5 , pp. 1395-1401
- Lee, J.-K.¹ Lee, G.-R.² Min, J.-H.³ Moon, S.H.⁴

20
- 65949099112
- JESOAN 0013-4651, 10.1149/1.3122623
- J. -K. Lee, S. -H. Lee, J. -H. MI. -Y. Jang, C. -K. Kim, and S. H. Moon, J. Electrochem. Soc. JESOAN 0013-4651, 156, D222 (2009). 10.1149/1.3122623
- (2009) J. Electrochem. Soc. , vol.156 , pp. 222
- Lee, J.-K.¹ Lee, S.-H.² Min, J.-H.³ Jang, I.-Y.⁴ Kim, C.-K.⁵ Moon, S.H.⁶

21
- 0003427863
- Plenum, New York
- F. F. Chen, Introduction to Plasma Physics and Controlled Fusion, Plenum, New York (1984).
- (1984) Introduction to Plasma Physics and Controlled Fusion
- Chen, F.F.¹

22
- 31044448417
- 3 plasma etching
- DOI 10.1116/1.1946712
- G. -R. Lee, J. -H. MJ. -K. Lee, S. -K. Kang, and S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 23, 713 (2005). 10.1116/1.1946712 (Pubitemid 43119191)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.4 , pp. 713-719
- Lee, G.-R.¹ Min, J.-H.² Lee, J.-K.³ Kang, S.-K.⁴ Moon, S.H.⁵

23
- 0036749619
- 4 plasma
- DOI 10.1116/1.1494819
- J. -H. MS. -W. Hwang, G. -R. Lee, and S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 20, 1574 (2002). 10.1116/1.1494819 (Pubitemid 35172413)
- (2002) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.20 , Issue.5 , pp. 1574-1581
- Min, J.-H.¹ Hwang, S.-W.² Lee, G.-R.³ Moon, S.H.⁴

24
- 21344493056
- Redeposition kinetics in fluorocarbon plasma etching
- DOI 10.1116/1.578879
- D. C. Gray, V. Mohindra, and H. H. SawJ. Vac. Sci. Technol. A JVTAD6 0734-2101, 12, 354 (1994). 10.1116/1.578879 (Pubitemid 24774242)
- (1994) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.12 , Issue.2 , pp. 354
- Gray, D.C.¹ Mohindra, V.² Sawin, H.H.³

25
- 0026947015
- JESOAN 0013-4651, 10.1149/1.2069072
- H. Hübner, J. Electrochem. Soc. JESOAN 0013-4651, 139, 3302 (1992). 10.1149/1.2069072
- (1992) J. Electrochem. Soc. , vol.139 , pp. 3302
- Hübner, H.¹

26
- 0037348213
- JVTAD6 0734-2101, 10.1116/1.1540982
- G. -R. Lee, S. -W. Hwang, J. -H. Mand S. H. Moon, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 21, 404 (2003). 10.1116/1.1540982
- (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 404
- Lee, G.-R.¹ Hwang, S.-W.² Min, J.-H.³ Moon, S.H.⁴

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