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Journal of Applied Physics

Volumn 111, Issue 11, 2012, Pages

Ohmic contact to n-AlGaN through bonding state transition at TiAl interface

(7) Zhang, Binbin a,b Lin, Wei a Li, Shuping a Zheng, Yu a Yang, Xu a Cai, Duanjun a Kang, Junyong a

a XIAMEN UNIVERSITY (China)

b Xiamen No 5 Middle School of Fujian (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-TREATMENT; BARRIER CONTACTS; BONDING STATE; CONTACT BARRIER; ELECTRON-TRANSFER; ELEMENTAL PROFILE; FIRST-PRINCIPLES CALCULATION; HIGH AL CONTENT; INTERFACIAL BONDING; INTERFACIAL LAYER; IV CHARACTERISTICS; LOCAL STATE; N-ALGAN; ORBITAL HYBRIDIZATION; TI ATOMS; TIAL ALLOY;

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CALCULATIONS; ELECTRIC CONTACTORS; OHMIC CONTACTS; ORBITAL TRANSFER; RAPID THERMAL ANNEALING; TITANIUM ALLOYS; TITANIUM COMPOUNDS;

INTERFACE STATES;

EID: 84863318680 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4727848 Document Type: Conference Paper

Times cited : (12)

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