The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Solid-State Electronics

Volumn 53, Issue 9, 2009, Pages 955-958

  Feng, Qian ^a   Li, Li Mei ^a   Hao, Yue ^a   Ni, Jin Yu ^a   Zhang, Jin Cheng ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN; GaN; HEMT; Ohmic contacts

Indexed keywords

ALGAN; ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ANNEALING METHODS; ANNEALING PROCESS; CONDUCTION BAND EDGE; GAN; HEMT; IN-DIFFUSION; MULTI-STEP; OUT-DIFFUSION; RAPID THERMAL ANNEALING PROCESS; SEM; SPECIFIC CONTACT RESISTANCES; TI/AL/NI/AU; TRANSMISSION LINE MODELS;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MORPHOLOGY; OHMIC CONTACTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE MORPHOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 67651094158     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.06.002     Document Type: Article

References (9)

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