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Volumn 43, Issue 39, 2010, Pages
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Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN LAYERS;
ALGAN/GAN HEMTS;
CONTACT INTERFACE;
CONTACT STRUCTURE;
CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES;
LOW RESISTANCE;
NEW MECHANISMS;
OHMIC PERFORMANCE;
SPECIFIC CONTACT RESISTIVITY;
TI/AL/NI/AU;
ELECTRIC CONTACTORS;
GALLIUM NITRIDE;
GOLD;
HIGH ELECTRON MOBILITY TRANSISTORS;
OHMIC CONTACTS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
X RAY SPECTROSCOPY;
X RAY DIFFRACTION ANALYSIS;
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EID: 78249281956
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/43/39/395102 Document Type: Article |
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Times cited : (8)
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References (11)
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