TiN/Al Ohmic contacts to N-face n -type GaN for high-performance vertical light-emitting diodes

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Jeon, Joon Woo ^a   Seong, Tae Yeon ^a   Kim, Hyunsoo ^b   Kim, Kyung Kook ^c  

^a Korea University   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LIGHT EMISSION; LIGHT EMITTING DIODES; MASS SPECTROMETRY; OHMIC CONTACTS; PHOTODEGRADATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CONTACT RESISTIVITIES; DEGRADATION MECHANISMS; ELECTRICAL PROPERTIES; OHMIC BEHAVIORS; OHMIC FORMATIONS; SECONDARY IONS; VERTICAL LIGHT-EMITTING DIODES; X-RAY PHOTOEMISSION SPECTROSCOPIES;

DEGRADATION;

EID: 59349117572     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073887     Document Type: Article

References (24)

1. W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, IEEE Photonics Technol. Lett. 18, 1809 (2006). 1041-1135
2. D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1591233 83, 311 (2003).
3. B. S. Tan, S. Yuan, and X. J. Kang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1704862 84, 2757 (2004).
4. U. Karrer, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1313275 77, 2012 (2000).
5. Z. -Q. Fang, D. C. Look, P. Visconti, D. -F. Wang, C. -Z. Lu, F. Yun, H. Morkoc, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1361273 78, 2178 (2001).
6. J. S. Kwak, K. Y. Lee, J. Y. Han, J. Cho, S. Chae, O. H. Nam, and Y. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1419053 79, 3254 (2001).
7. T. Jang, S. N. Lee, O. H. Nam, and Y. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2201881 88, 193505 (2006).
8. B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118284 70, 57 (1997).
9. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morko̧, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111961 64, 1003 (1994).
10. L. F. Lester, J. M. Brown, J. C. Ramer, L. Zhang, S. D. Hersee, and J. C. Zolper, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117695 69, 2737 (1996).
11. C. -T. Lee, Y. -J. Lin, and C. -H. Lin, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1506383 92, 3825 (2002).
12. J. -O. Song, S. -H. Kim, J. S. Kwak, and T. -Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1598284 83, 1154 (2003).
13. H. W. Jang, J. -H. Lee, and J. -L. Lam, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1481782 80, 3955 (2002).
14. B. P. Luther, S. E. Mohney, and T. N. Jackson, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/13/11/017 13, 1322 (1998).
15. H. Ichimura and A. Kawana, J. Mater. Res. JMREEE 0884-2914 10.1557/JMR.1993.1093 8, 1093 (1993).
16. J. -S. Jang, D. Kim, and T. -Y. Seong, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2187274 99, 073704 (2006).
17. L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, and J. Redwing, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368270 84, 2099 (1998).
18. B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119305 70, 57 (1997).
19. H. Kim, S. -N. Lee, Y. Park, J. S. Kwak, and T. -Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2963492 93, 032105 (2008).
20. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z. -F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morko̧, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117060 69, 1556 (1996).
21. J. -O. Song, D. -S. Leem, and T. -Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1622984 83, 3513 (2003).
22. J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125772 76, 415 (2000).
23. J. S. Jang and T. -Y. Seong, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1287236 88, 3064 (2000).
24. H. Kim, J. -H. Ryou, R. D. Dupuis, S. -N. Lee, Y. Park, J. -W. Jeon, and T. -Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3013838 93, 192106 (2008).