Investigation of unusual mobile ion effects in thermally grown SiO 2 on 4H-SiC(0001) at high temperatures

Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

  Chanthaphan, Atthawut ^a   Hosoi, Takuji ^a   Mitani, Shuhei ^b   Nakano, Yuki ^b   Nakamura, Takashi ^b   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL MEASUREMENT; HIGH TEMPERATURE; HYDROGEN ANNEALING; INTERFACE QUALITY; MOBILE ION EFFECTS; MOBILE IONS; POST-OXIDATION;

HYDROGEN; IONIC CONDUCTION; SEMICONDUCTING SILICON;

SILICON CARBIDE;

EID: 84863308098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729780     Document Type: Article

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