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Volumn 98, Issue 10, 2011, Pages

Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor

(2) Yonamoto, Yoshiki a Akamatsu, Naotoshi a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC BONDING; ATOMIC SCALE; HYDROGEN ATOMS; INTERFACE TRAPS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITRIDED; NMOSFET; SPIN DEPENDENT TRANSPORT; SUBMICRON;

ATOMS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

FIELD EFFECT TRANSISTORS;

EID: 79952650665 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559223 Document Type: Article

Times cited : (8)

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