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Volumn 111, Issue 11, 2012, Pages

Characterization of InGaN-based nanorod light emitting diodes with different indium compositions

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BLUE LEDS; DRY ETCHING TECHNIQUES; ELECTRICAL FIELD; EMISSION ENHANCEMENT; ENHANCEMENT FACTOR; EPIWAFERS; FORWARD BIAS; GREEN LEDS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LIGHT OUTPUT POWER; NANO-MASK; NANOROD ARRAYS; REVERSE LEAKAGE CURRENT; SELF-ASSEMBLED; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THEORETICAL CALCULATIONS;

EID: 84863304226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4725417     Document Type: Conference Paper
Times cited : (70)

References (22)
  • 15
    • 0042099114 scopus 로고    scopus 로고
    • 2nd ed. (Cambridge University Press, Cambridge, UK)
    • E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, UK, 2006).
    • (2006) Light-Emitting Diodes
    • Schubert, E.F.1
  • 16
    • 84927553170 scopus 로고
    • 10.1109/JRPROC.1957.278528
    • C. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957). 10.1109/JRPROC.1957.278528
    • (1957) Proc. IRE , vol.45 , pp. 1228
    • Sah, C.1    Noyce, R.N.2    Shockley, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.