Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

Journal of Physics D: Applied Physics

Volumn 44, Issue 39, 2011, Pages

  Wang, Q ^a   Bai, J ^a   Gong, Y P ^a   Wang, T ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DRY ETCHING TECHNIQUES; ENHANCEMENT FACTOR; EPITAXIAL WAFERS; INGAN/GAN; INGAN/GAN MQWS; INTERNAL QUANTUM EFFICIENCY; NANO-MASK; OPTICAL INVESTIGATION; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM CONFINED STARK EFFECT; X-RAY RECIPROCAL SPACE MAPPING;

INDIUM; NANORODS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80052919972     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/39/395102     Document Type: Article

References (21)

1. Grandjean N and Ilegems M 2007 Proc. IEEE 95 9
2. O'Donnell K P, Martin R W and Middleton P G 1999 Phys. Rev. Lett. 82 237
3. Wang T, Bai J, Sakai S and Ho J K 2001 Appl. Phys. Lett. 78 2617
4. Chichibu S et al 2006 Nature Mater. 5 810
5. Chakraborty A, Haskell B A, Keller S, Speck J S, DenBaars S P, Nakamura S and Mishra U K 2004 Appl. Phys. Lett. 85 5143
6. Chitnis A, Chen C, Adivarahan V, Shatalov M, Kuokstic E, Mandavilli V, Yang J and Khan M A 2004 Appl. Phys. Lett. 84 3663
7. Sharama R, Pattison P M, Masui H, Farrel R M, Baker T J, Haskell B A, Wu F, Denbaars S P, Speck J S and Nakamura S 2005 Appl. Phys. Lett. 87 231110
8. Masui H, Nakamura S, DenBaars S P and Mishra U K 2010 IEEE Trans. Electron Devices 57 88
9. Ramesh V, Kikuchi A, Kishino K, Funato M and Kawakami Y 2010 J. Appl. Phys. 107 114303
10. Ono H, Ono Y, Kashara K, Mizuno J and Shoji S 2008 Japan. J. Appl. Phys. 47 933
11. Chiu C H et al 2007 Nanotechnology 18 445201
12. Wu Y R, Chiu C H, Chang C Y, Yu P C and Kuo H C 2009 IEEE J. Sel. Top. Quantum Electron. 15 1226
13. Wang T UK Patent Application GB1102122.7, under pending
14. Bai J, Wang Q, Wang T, Cullis A G and Parbrook P J 2009 J. Appl. Phys. 105 053505
15. Wang Q, Wang T, Bai J, Cullis A G, Parbrook P J and Ranalli F 2008 J. Appl. Phys. 103 123522
16. Kawakami Y, Kaneta A, Su L, Zhu Y, Okamoto K, Funato M, Kikuchi A and Kishino K 2010 J. Appl. Phys. 107 023522
17. Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D, Franco N, Watson I M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913
18. Heinke H, Einfeldt S, Kuhn-Heinrich B, Plahl G, Möller M O and Landwehr G 1995 J. Phys. D: Appl. Phys. 28 A104
19. Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H and Akasaki I 1997 Japan. J. Appl. Phys. Part 2 36 L382
20. Nakaoka T, Kako S and Arakawa Y 2006 Phys. Rev. B 73 121305 (R)
21. Kümmell T, Bacher G, Forchel A, Lermann G, Kiefer W, Jobst B, Hommel D and Landwehr G 1998 Phys. Rev. B 57 15439