Structural and electrical properties of Mo/n-GaN Schottky diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 3, 2006, Pages 622-627

  Rajagopal Reddy, V ^a   Ramesh, C K ^a   Choi, Chel Jong ^b  

^a UNIVERSITY OF MYSORE   (India)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT; STRUCTURAL PROPERTIES;

ANNEALING; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); MOLYBDENUM COMPOUNDS; X RAY DIFFRACTION;

SCHOTTKY BARRIER DIODES;

EID: 33644659428     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521313     Document Type: Article

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