Reliability studies of narrow Cu lines

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 645-649

  Schindler, Günther ^a   Penka, Sabine ^a   Steinlesberger, Gernot ^a   Traving, Martin ^a   Steinhögl, Werner ^a   Engelhardt, Manfred ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Copper; Electromigration; Nano interconnects; Reliability

Indexed keywords

CORRELATION METHODS; ELECTRIC LINES; ELECTROMIGRATION; METALLIZING; RELIABILITY;

CU LINES; DIFFUSION BARRIERS; NANO INTERCONNECTS;

COPPER;

EID: 28044473872     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.069     Document Type: Conference Paper

References (8)

1. W. Steinhögl Phys. Rev. B 66 2002 075414
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3. The International Technology Roadmap for Semiconductors (ITRS), 2004 update.
4. G. Steinlesberger et al., in: Proceedings of IITC 2002, p. 265.
5. G. Schindler et al., in: Proceedings of AMC 2002, p. 13.
6. A. von Glasow et al., in: Proceedings of the 41 Annual Reliability Physics Symposium, p. 126.
7. M. Traving et al., in: Proceedings of AMC 2004, p. 671.
8. M. Traving et al., in: Proceedings of AMC 2002, p. 753.