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Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 490-494

Growth and characterization of GaN nanowires for hydrogen sensors

(8) Johnson, Jason L a Choi, Yongho a Ural, Ant a Lim, Wantae a Wright, J S a Gila, B P a Ren, F a Pearton, S J a

a University of Florida (United States)

Author keywords

Chemical vapor deposition; GaN nanowire; Hydrogen sensor

Indexed keywords

AS-GROWN; CATALYTIC CHEMICAL VAPOR DEPOSITIONS; DETECTION LIMITS; FABRICATED DEVICES; GAN NANOWIRE; GOLD THIN FILMS; HIGH QUALITIES; HIGH SENSITIVITIES; HYDROGEN SENSOR; HYDROGEN-SENSING; NEAR-BAND EDGE EMISSIONS; ROOM TEMPERATURES; SI WAFERS; SINGLE-CRYSTAL WURTZITE; SOURCE AND DRAIN ELECTRODES; STRUCTURAL CHARACTERIZATIONS; THIN LAYERS;

COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD DEPOSITS; HYDROGEN; NANOWIRES; PALLADIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON COMPOUNDS; SILICON WAFERS; VAPORS; ZINC SULFIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 61849118556 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0596-z Document Type: Conference Paper

Times cited : (45)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.