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Volumn 5, Issue 6-8, 1996, Pages 790-796

Negative electron affinity surfaces of aluminum nitride and diamond

Author keywords

Electron affinity; Electron emission; Nitrides; Surfaces

Indexed keywords


EID: 0000342585     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00485-8     Document Type: Article
Times cited : (81)

References (23)
  • 7
    • 0028732157 scopus 로고
    • Diamond, SiC and nitride wide bandgap semiconductors
    • C.H. Carter, G. Gildenblat, S. Nakamura, R.J. Nemanich (eds.), Pittsburgh, PA
    • P.K, Baumann, T.P. Humphreys and R.J. Nemanich, in C.H. Carter, G. Gildenblat, S. Nakamura, R.J. Nemanich (eds.), Diamond, SiC and Nitride Wide Bandgap Semiconductors, Mater. Res. Soc. Proc. 339, Pittsburgh, PA (1994) 69.
    • (1994) Mater. Res. Soc. Proc. , vol.339 , pp. 69
    • Baumann, P.K.1    Humphreys, T.P.2    Nemanich, R.J.3
  • 23
    • 0042618690 scopus 로고    scopus 로고
    • C. Bandis, W-Y. Chang, B.B. Pate, 67 (1995) 3912
    • C. Bandis, W-Y. Chang, B.B. Pate, 67 (1995) 3912.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.