Field emission enhancement from patterned gallium nitride nanowires

Nanotechnology

Volumn 18, Issue 37, 2007, Pages

  Ng, D K T ^a,b   Hong, M H ^a,b   Tan, L S ^a   Zhu, Y W ^a   Sow, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; FIELD EMISSION; GALLIUM NITRIDE; LASER ABLATION; SUBSTRATES;

GALLIUM NITRIDE NANOWIRES; NANOWIRES RANGE; PULSED LASER ABLATION; WURZITE STRUCTURES;

NANOWIRES;

GALLIUM NITRATE; NANOWIRE;

ARTICLE; CRYSTALLIZATION; DENSITY; ELECTRIC POTENTIAL; ELECTRON; FIELD EMISSION; NANOTECHNOLOGY; PRIORITY JOURNAL; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34548184429     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/37/375707     Document Type: Article

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