Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Zheng, C C ^a   Xu, S J ^a   Ning, J Q ^a   Bao, W ^a   Wang, J F ^a   Gao, J ^a   Liu, J M ^b   Zhu, J H ^a,b   Liu, X L ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; EPILAYERS GROWN; LOW TEMPERATURE PHOTOLUMINESCENCE; PEAK POSITION; R-SAPPHIRE; RESIDUAL STRAINS; VERTICAL DIRECTION; ZNO;

EPILAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SAPPHIRE; X RAY DIFFRACTION; ZINC OXIDE;

STRAIN;

EID: 84863141790     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/035008     Document Type: Article

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